Investigation on the abnormal resistive switching induced by ultraviolet light exposure based on HfOx film

Kow Ming Chang; Wen Hsien Tzeng; Kou Chen Liu; Yi Chun Chan; Chun Chih Kuo

doi:10.1016/j.microrel.2010.05.012

Investigation on the abnormal resistive switching induced by ultraviolet light exposure based on HfOx film

Kow Ming Chang, Wen Hsien Tzeng, Kou Chen Liu^*, Yi Chun Chan, Chun Chih Kuo

^*此作品的通信作者

電子工程學系(含學碩博士班)

研究成果: 期刊稿件 › 文章 › 同行評審

16 引文斯高帕斯（Scopus）

摘要

Effect of ultraviolet (UV) light exposure on the resistive switching characteristics of a ITO/HfOx/TiN structure were investigated in this study. Samples exposed with and without ITO shield film exhibit distinct switching characteristics, including leakage current, I-V curves, set and reset voltage fluctuation. Based on random circuit network simulation by Liu et al., we suggest the distinction was attributed to the different filament shapes during forming process. Defects preexisted inside the HfOx film can cause large difference on the electrical properties. Therefore, the UV laser exposure is a critical issue on the electrical characteristics of RRAM devices.

原文	英語
頁（從 - 到）	1931-1934
頁數	4
期刊	Microelectronics Reliability
卷	50
發行號	12
DOIs	https://doi.org/10.1016/j.microrel.2010.05.012
出版狀態	已出版 - 12 2010

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10.1016/j.microrel.2010.05.012

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@article{0d039ea666df4472afc6255913502261,

title = "Investigation on the abnormal resistive switching induced by ultraviolet light exposure based on HfOx film",

abstract = "Effect of ultraviolet (UV) light exposure on the resistive switching characteristics of a ITO/HfOx/TiN structure were investigated in this study. Samples exposed with and without ITO shield film exhibit distinct switching characteristics, including leakage current, I-V curves, set and reset voltage fluctuation. Based on random circuit network simulation by Liu et al., we suggest the distinction was attributed to the different filament shapes during forming process. Defects preexisted inside the HfOx film can cause large difference on the electrical properties. Therefore, the UV laser exposure is a critical issue on the electrical characteristics of RRAM devices.",

author = "Chang, {Kow Ming} and Tzeng, {Wen Hsien} and Liu, {Kou Chen} and Chan, {Yi Chun} and Kuo, {Chun Chih}",

year = "2010",

month = dec,

doi = "10.1016/j.microrel.2010.05.012",

language = "英语",

volume = "50",

pages = "1931--1934",

journal = "Microelectronics Reliability",

issn = "0026-2714",

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TY - JOUR

T1 - Investigation on the abnormal resistive switching induced by ultraviolet light exposure based on HfOx film

AU - Chang, Kow Ming

AU - Tzeng, Wen Hsien

AU - Liu, Kou Chen

AU - Chan, Yi Chun

AU - Kuo, Chun Chih

PY - 2010/12

Y1 - 2010/12

N2 - Effect of ultraviolet (UV) light exposure on the resistive switching characteristics of a ITO/HfOx/TiN structure were investigated in this study. Samples exposed with and without ITO shield film exhibit distinct switching characteristics, including leakage current, I-V curves, set and reset voltage fluctuation. Based on random circuit network simulation by Liu et al., we suggest the distinction was attributed to the different filament shapes during forming process. Defects preexisted inside the HfOx film can cause large difference on the electrical properties. Therefore, the UV laser exposure is a critical issue on the electrical characteristics of RRAM devices.

AB - Effect of ultraviolet (UV) light exposure on the resistive switching characteristics of a ITO/HfOx/TiN structure were investigated in this study. Samples exposed with and without ITO shield film exhibit distinct switching characteristics, including leakage current, I-V curves, set and reset voltage fluctuation. Based on random circuit network simulation by Liu et al., we suggest the distinction was attributed to the different filament shapes during forming process. Defects preexisted inside the HfOx film can cause large difference on the electrical properties. Therefore, the UV laser exposure is a critical issue on the electrical characteristics of RRAM devices.

UR - http://www.scopus.com/inward/record.url?scp=78649448172&partnerID=8YFLogxK

U2 - 10.1016/j.microrel.2010.05.012

DO - 10.1016/j.microrel.2010.05.012

M3 - 文章

AN - SCOPUS:78649448172

SN - 0026-2714

VL - 50

SP - 1931

EP - 1934

JO - Microelectronics Reliability

JF - Microelectronics Reliability

IS - 12

ER -

Investigation on the abnormal resistive switching induced by ultraviolet light exposure based on HfOx film

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