Light-immune pH sensor with SiC-based electrolyte-insulator-semiconductor structure

Yi Ting Lin; Chien Shiang Huang; Lee Chow; Jyun Ming Lan; Chia Ming Yang; Liann Be Chang; Chao Sung Lai

doi:10.7567/APEX.6.127002

Light-immune pH sensor with SiC-based electrolyte-insulator-semiconductor structure

Yi Ting Lin, Chien Shiang Huang, Lee Chow, Jyun Ming Lan, Chia Ming Yang, Liann Be Chang, Chao Sung Lai

研究成果: 期刊稿件 › 文章 › 同行評審

8 引文斯高帕斯（Scopus）

摘要

An electrolyte-insulator-semiconductor (EIS) structure with high-band-gap semiconductor of silicon carbide is demonstrated as a pH sensor in this report. Two different sensing membranes, i.e., gadolinium oxide (Gd2O3) and hafnium oxide (HfO2), were investigated. The HfO2 film deposited by atomic layer deposition (ALD) at low temperature shows high pH sensing properties with a sensitivity of 52.35 mV/pH and a low signal of 4.95mV due to light interference. The EIS structures with silicon carbide can provide better visible light immunity due to its high band gap that allows pH detection in an outdoor environment without degradation of pH sensitivity.

原文	英語
文章編號	127002
期刊	Applied Physics Express
卷	6
發行號	12
DOIs	https://doi.org/10.7567/APEX.6.127002
出版狀態	已出版 - 12 2013

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title = "Light-immune pH sensor with SiC-based electrolyte-insulator-semiconductor structure",

abstract = "An electrolyte-insulator-semiconductor (EIS) structure with high-band-gap semiconductor of silicon carbide is demonstrated as a pH sensor in this report. Two different sensing membranes, i.e., gadolinium oxide (Gd2O3) and hafnium oxide (HfO2), were investigated. The HfO2 film deposited by atomic layer deposition (ALD) at low temperature shows high pH sensing properties with a sensitivity of 52.35 mV/pH and a low signal of 4.95mV due to light interference. The EIS structures with silicon carbide can provide better visible light immunity due to its high band gap that allows pH detection in an outdoor environment without degradation of pH sensitivity.",

author = "Lin, {Yi Ting} and Huang, {Chien Shiang} and Lee Chow and Lan, {Jyun Ming} and Yang, {Chia Ming} and Chang, {Liann Be} and Lai, {Chao Sung}",

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AU - Lin, Yi Ting

AU - Huang, Chien Shiang

AU - Chow, Lee

AU - Lan, Jyun Ming

AU - Yang, Chia Ming

AU - Chang, Liann Be

AU - Lai, Chao Sung

PY - 2013/12

Y1 - 2013/12

N2 - An electrolyte-insulator-semiconductor (EIS) structure with high-band-gap semiconductor of silicon carbide is demonstrated as a pH sensor in this report. Two different sensing membranes, i.e., gadolinium oxide (Gd2O3) and hafnium oxide (HfO2), were investigated. The HfO2 film deposited by atomic layer deposition (ALD) at low temperature shows high pH sensing properties with a sensitivity of 52.35 mV/pH and a low signal of 4.95mV due to light interference. The EIS structures with silicon carbide can provide better visible light immunity due to its high band gap that allows pH detection in an outdoor environment without degradation of pH sensitivity.

AB - An electrolyte-insulator-semiconductor (EIS) structure with high-band-gap semiconductor of silicon carbide is demonstrated as a pH sensor in this report. Two different sensing membranes, i.e., gadolinium oxide (Gd2O3) and hafnium oxide (HfO2), were investigated. The HfO2 film deposited by atomic layer deposition (ALD) at low temperature shows high pH sensing properties with a sensitivity of 52.35 mV/pH and a low signal of 4.95mV due to light interference. The EIS structures with silicon carbide can provide better visible light immunity due to its high band gap that allows pH detection in an outdoor environment without degradation of pH sensitivity.

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SN - 1882-0778

VL - 6

JO - Applied Physics Express

JF - Applied Physics Express

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Light-immune pH sensor with SiC-based electrolyte-insulator-semiconductor structure

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