Low current bipolar resistive switching memory using CU metallic filament in Ge0.2Se0.8 solid-electrolyte

S. Z. Rahaman; S. Maikap; C. H. Lin; P. J. Tzeng; H. Y. Lee; T. Y. Wu; Y. S. Chen; F. Chen; M. J. Kao; M. J. Tsai

doi:10.1109/VTSA.2010.5488915

Low current bipolar resistive switching memory using CU metallic filament in Ge_0.2Se_0.8 solid-electrolyte

S. Z. Rahaman
, S. Maikap
, C. H. Lin
, P. J. Tzeng
, H. Y. Lee
, T. Y. Wu
, Y. S. Chen
, F. Chen
, M. J. Kao
, M. J. Tsai

電子工程學系(含學碩博士班)

Chang Gung University
Industrial Technology Research Institute of Taiwan

研究成果: 圖書/報告稿件的類型 › 會議稿件 › 同行評審

4 引文斯高帕斯（Scopus）

摘要

Low current/voltage (1 nA/1.3V) operation of resistive switching memory device using Cu metallic filament in Ge_0.2Se_0.8 solid-electrolyte has been investigated. This resistive memory device have a large resistance ratio of > 10 at 1 nA current compliance, good endurance of ∼10⁵ cycles, and good data retention with a current of 1 nA up to 2×10³ seconds. The low resistance state decreases with increasing the programming current from 1 nA to 500 μA, which can be useful for future nanoscale MLC applications. A strong Cu metallic filament is investigated by monitoring the negative erase current (I_e).

原文	英語
主出版物標題	Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010
頁面	134-135
頁數	2
DOIs	https://doi.org/10.1109/VTSA.2010.5488915
出版狀態	已出版 - 2010
事件	2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010 - Hsin Chu, 台灣持續時間: 26 04 2010 → 28 04 2010

出版系列

名字	Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010

Conference

Conference	2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010
國家/地區	台灣
城市	Hsin Chu
期間	26/04/10 → 28/04/10

存取文件

10.1109/VTSA.2010.5488915

其它文件與鏈接

Link to publication in Scopus

引用此

Rahaman, S. Z., Maikap, S., Lin, C. H., Tzeng, P. J., Lee, H. Y., Wu, T. Y., Chen, Y. S., Chen, F., Kao, M. J., & Tsai, M. J. (2010). Low current bipolar resistive switching memory using CU metallic filament in Ge_0.2Se_0.8 solid-electrolyte. 於 Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010 (頁 134-135). 文章 5488915 (Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010). https://doi.org/10.1109/VTSA.2010.5488915

Rahaman, S. Z. ; Maikap, S. ; Lin, C. H. 等. / Low current bipolar resistive switching memory using CU metallic filament in Ge_0.2Se_0.8 solid-electrolyte. Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010. 2010. 頁 134-135 (Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010).

@inproceedings{d0ca5be5c5f44398a0168222e63811d4,

title = "Low current bipolar resistive switching memory using CU metallic filament in Ge0.2Se0.8 solid-electrolyte",

abstract = "Low current/voltage (1 nA/1.3V) operation of resistive switching memory device using Cu metallic filament in Ge0.2Se0.8 solid-electrolyte has been investigated. This resistive memory device have a large resistance ratio of > 10 at 1 nA current compliance, good endurance of ∼105 cycles, and good data retention with a current of 1 nA up to 2{\texttimes}103 seconds. The low resistance state decreases with increasing the programming current from 1 nA to 500 μA, which can be useful for future nanoscale MLC applications. A strong Cu metallic filament is investigated by monitoring the negative erase current (Ie).",

author = "Rahaman, \{S. Z.\} and S. Maikap and Lin, \{C. H.\} and Tzeng, \{P. J.\} and Lee, \{H. Y.\} and Wu, \{T. Y.\} and Chen, \{Y. S.\} and F. Chen and Kao, \{M. J.\} and Tsai, \{M. J.\}",

year = "2010",

doi = "10.1109/VTSA.2010.5488915",

language = "英语",

isbn = "9781424450633",

series = "Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010",

pages = "134--135",

booktitle = "Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010",

note = "2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010 ; Conference date: 26-04-2010 Through 28-04-2010",

}

Rahaman, SZ, Maikap, S, Lin, CH, Tzeng, PJ, Lee, HY, Wu, TY, Chen, YS, Chen, F, Kao, MJ & Tsai, MJ 2010, Low current bipolar resistive switching memory using CU metallic filament in Ge_0.2Se_0.8 solid-electrolyte. 於 Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010., 5488915, Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010, 頁 134-135, 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010, Hsin Chu, 台灣, 26/04/10. https://doi.org/10.1109/VTSA.2010.5488915

Low current bipolar resistive switching memory using CU metallic filament in Ge_0.2Se_0.8 solid-electrolyte. / Rahaman, S. Z.; Maikap, S.; Lin, C. H. 等.
Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010. 2010. p. 134-135 5488915 (Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010).

研究成果: 圖書/報告稿件的類型 › 會議稿件 › 同行評審

TY - GEN

T1 - Low current bipolar resistive switching memory using CU metallic filament in Ge0.2Se0.8 solid-electrolyte

AU - Rahaman, S. Z.

AU - Maikap, S.

AU - Lin, C. H.

AU - Tzeng, P. J.

AU - Lee, H. Y.

AU - Wu, T. Y.

AU - Chen, Y. S.

AU - Chen, F.

AU - Kao, M. J.

AU - Tsai, M. J.

PY - 2010

Y1 - 2010

N2 - Low current/voltage (1 nA/1.3V) operation of resistive switching memory device using Cu metallic filament in Ge0.2Se0.8 solid-electrolyte has been investigated. This resistive memory device have a large resistance ratio of > 10 at 1 nA current compliance, good endurance of ∼105 cycles, and good data retention with a current of 1 nA up to 2×103 seconds. The low resistance state decreases with increasing the programming current from 1 nA to 500 μA, which can be useful for future nanoscale MLC applications. A strong Cu metallic filament is investigated by monitoring the negative erase current (Ie).

AB - Low current/voltage (1 nA/1.3V) operation of resistive switching memory device using Cu metallic filament in Ge0.2Se0.8 solid-electrolyte has been investigated. This resistive memory device have a large resistance ratio of > 10 at 1 nA current compliance, good endurance of ∼105 cycles, and good data retention with a current of 1 nA up to 2×103 seconds. The low resistance state decreases with increasing the programming current from 1 nA to 500 μA, which can be useful for future nanoscale MLC applications. A strong Cu metallic filament is investigated by monitoring the negative erase current (Ie).

UR - https://www.scopus.com/pages/publications/77957897176

U2 - 10.1109/VTSA.2010.5488915

DO - 10.1109/VTSA.2010.5488915

M3 - 会议稿件

AN - SCOPUS:77957897176

SN - 9781424450633

T3 - Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010

SP - 134

EP - 135

BT - Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010

T2 - 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010

Y2 - 26 April 2010 through 28 April 2010

ER -

Rahaman SZ, Maikap S, Lin CH, Tzeng PJ, Lee HY, Wu TY 等. Low current bipolar resistive switching memory using CU metallic filament in Ge_0.2Se_0.8 solid-electrolyte. 於 Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010. 2010. p. 134-135. 5488915. (Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010). doi: 10.1109/VTSA.2010.5488915