@inproceedings{d5e07bbbcdb94c90a86d0c5310d5b987,
title = "Low insertion loss switch technology using 6-inch InGaP/AlGaAs/InGaAs pHEMT production process",
abstract = "A high yield low insertion loss switch (LIL switch) for GSM and WLAN applications was demonstrated by using 0.5 μm gate length InGaP/AlGaAs/ InGaAs pHEMT technology. In order to improve the chip yield during gate recess process, the high-selectivity InGaP Schottky layer design was applied in this study. Besides, ordering type InGaP Schottky layer also provides an extreme lower ΔEc (<0.1eV) as compared with AlGaAs ones and this character is helpful to improve contact resistance and insertion loss performance of switch. The fabricated LIL switch IC achieved a low insertion loss of 0.18 dB under a 0.9 GHz operation. In addition, the output power density of this proposed InGaP/AlGaAs/InGaAs pHEMT has demonstrated 284mW/mm under Vds of 3V at 2GHz operation. Therefore, this 6-inch production pHEMT switch process exhibited a high potential in LIL switch and PA MMIC design for GSM and WLAN applications.",
keywords = "InGaP, Power, Switch, pHEMT",
author = "Chiu, \{H. C.\} and Yeh, \{T. J.\} and Hsieh, \{Y. Y.\} and Tony Hwang and Paul Yeh and Wu, \{C. S.\}",
year = "2004",
doi = "10.1109/CSICS.2004.1392508",
language = "英语",
isbn = "0780386167",
series = "Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC",
pages = "119--122",
booktitle = "IEEE Compound Semiconductor Integrated Circuit Symposium; 2004 IEEE CSIC Symposium, 26th Anniversary",
note = "IEEE Compound Semiconductor Integrated Circuit Symposium; 2004 IEEE CSIC Symposium ; Conference date: 24-10-2004 Through 27-10-2004",
}