Low noise and high gain RF MOSFETs on plastic substrates

H. L. Kao*, Albert Chin, C. C. Huang, B. F. Hung, K. C. Chiang, Z. M. Lai, S. P. McAlister, C. C. Chi

*此作品的通信作者

研究成果: 圖書/報告稿件的類型會議稿件同行評審

3 引文 斯高帕斯(Scopus)

摘要

A low minimum noise figure (NF min) of 1.2 dB and high associated gain of 12.8 dB at 10 GHz, were measured for 0.18 μm RF MOSFETs on plastic, made by substrate thinning (∼30 μm), transfer and bonding. The performance can be further improved to 0.96 dB NF min and 14.1 dB associated gain at 10 GHz, under applied tensile strain, using flexible Si on plastic. A 3.5 nH inductor on plastic showed a 55% higher Q-factor with a wider frequency range, compared with that on a Si substrate.

原文英語
主出版物標題2005 IEEE MTT-S International Microwave Symposium Digest
頁面295-298
頁數4
DOIs
出版狀態已出版 - 2005
對外發佈
事件2005 IEEE MTT-S International Microwave Symposium - Long Beach, CA, 美國
持續時間: 12 06 200517 06 2005

出版系列

名字IEEE MTT-S International Microwave Symposium Digest
2005
ISSN(列印)0149-645X

Conference

Conference2005 IEEE MTT-S International Microwave Symposium
國家/地區美國
城市Long Beach, CA
期間12/06/0517/06/05

指紋

深入研究「Low noise and high gain RF MOSFETs on plastic substrates」主題。共同形成了獨特的指紋。

引用此