@article{514b163e671b4f77905d53dc7e57ba58,
title = "Low Polarization Loss of Long Endurance on Scavenged Ru-Based Electrode Ferroelectric Hf0.5Zr0.5O2by Optimizing TiNxInterfacial Capping Layer and Its Fatigue Mechanism",
abstract = "Double remnant polarization (2Pr values are increased significantly from 17.1μC/cm2 to 39.9μC/cm2 by reducing the TiNx interfacial capping layer (ICL) thickness from 3 nm to 1 nm in the Ru/TiNx/Hf0.5 Zr0.5O2(HZO)/TiN structure owing to lower monoclinic (m) phase with respect to orthorhombic (o) plus rhombohedral (r) phases. These phases are observed by geometrical phase analysis (GPA) of high-resolution transmission electron microscope (HRTEM) images. An optimized 2 nm TiNx ICL ferroelectric memory shows lowest fatigue and mechanism is higher m-phase starting to grow from the HZO/TiN BE interface, which is evidenced in the HRTEM image after long endurance of 1011 cycles under high ±4 MV/cm, 0.5μs (remaining higher 2Pr value of 20μC/cm2).",
keywords = "Electrodes, Fatigue, fatigue mechanism, ferroelectric memory, Films, furnace annealing, Leakage currents, long endurance, Reservoirs, scavenged-Ru based electrode, Tin, TiN<sub xmlns:ali={"}http://www.niso.org/schemas/ali/1.0/{"} xmlns:mml={"}http://www.w3.org/1998/Math/MathML{"} xmlns:xlink={"}http://www.w3.org/1999/xlink{"} xmlns:xsi={"}http://www.w3.org/2001/XMLSchema-instance{"}>x</sub> interfacial capping layer, Zirconium, TiN interfacial capping layer",
author = "Asim Senapati and Lou, {Zhao Feng} and Lee, {Jia Yang} and Chen, {Yi Pin} and Huang, {Shih Yin} and Siddheswar Maikap and Lee, {Min Hung} and Liu, {Chee Wee}",
note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",
year = "2024",
month = apr,
day = "1",
doi = "10.1109/LED.2024.3368422",
language = "英语",
volume = "45",
pages = "673--676",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "4",
}