Low power operation of resistive switching memory device using novel W/Ge0.4Se0.6/Cu/Al structure

S. Z. Rahaman; S. Maikap; H. C. Chiu; C. H. Lin; T. Y. Wu; Y. S. Chen; P. J. Tzeng; F. Chen; M. J. Kao; M. J. Tsai

doi:10.1109/IMW.2009.5090597

Low power operation of resistive switching memory device using novel W/Ge_0.4Se_0.6/Cu/Al structure

S. Z. Rahaman
, S. Maikap
, H. C. Chiu
, C. H. Lin
, T. Y. Wu
, Y. S. Chen
, P. J. Tzeng
, F. Chen
, M. J. Kao
, M. J. Tsai

電子工程學系(含學碩博士班)

Chang Gung University
Industrial Technology Research Institute of Taiwan

研究成果: 圖書/報告稿件的類型 › 會議稿件 › 同行評審

7 引文斯高帕斯（Scopus）

摘要

Bipolar resistive switching memory device with a low power operation (200μA/1.3V) in a W/Ge_0.4Se_0.6/Cu/Al structure has been investigated. A stronger Cu chain formation can be observed by monitoring both the erase voltage and current. The low resistance state (R_Low) decreases with increasing the programming current from 1nA to 500μA, which can be useful for multi-level of data storage. This resistive memory device has a large threshold voltage of ∼0.5V, good resistance ratio (R _High/R_Low) of 1.6×10², good endurance of >1.5×10⁵ cycles, and excellent retention (>11 hours) with a resistance ratio of >1.3×10² at 150°C can be used in future nonvolatile memories.

原文	英語
主出版物標題	2009 IEEE International Memory Workshop, IMW '09
DOIs	https://doi.org/10.1109/IMW.2009.5090597
出版狀態	已出版 - 2009
事件	2009 IEEE International Memory Workshop, IMW '09 - Monterey, CA, 美國持續時間: 10 05 2009 → 14 05 2009

出版系列

名字	2009 IEEE International Memory Workshop, IMW '09

Conference

Conference	2009 IEEE International Memory Workshop, IMW '09
國家/地區	美國
城市	Monterey, CA
期間	10/05/09 → 14/05/09

存取文件

10.1109/IMW.2009.5090597

其它文件與鏈接

Link to publication in Scopus

引用此

Rahaman, S. Z., Maikap, S., Chiu, H. C., Lin, C. H., Wu, T. Y., Chen, Y. S., Tzeng, P. J., Chen, F., Kao, M. J., & Tsai, M. J. (2009). Low power operation of resistive switching memory device using novel W/Ge_0.4Se_0.6/Cu/Al structure. 於 2009 IEEE International Memory Workshop, IMW '09 文章 5090597 (2009 IEEE International Memory Workshop, IMW '09). https://doi.org/10.1109/IMW.2009.5090597

@inproceedings{607ea1df676443e18d7b2de8db01966b,

title = "Low power operation of resistive switching memory device using novel W/Ge0.4Se0.6/Cu/Al structure",

abstract = "Bipolar resistive switching memory device with a low power operation (200μA/1.3V) in a W/Ge0.4Se0.6/Cu/Al structure has been investigated. A stronger Cu chain formation can be observed by monitoring both the erase voltage and current. The low resistance state (RLow) decreases with increasing the programming current from 1nA to 500μA, which can be useful for multi-level of data storage. This resistive memory device has a large threshold voltage of ∼0.5V, good resistance ratio (R High/RLow) of 1.6{\texttimes}102, good endurance of >1.5{\texttimes}105 cycles, and excellent retention (>11 hours) with a resistance ratio of >1.3{\texttimes}102 at 150°C can be used in future nonvolatile memories.",

keywords = "Cu chain, Electromigration and oxidation, Nanoscale memory, Resistive switching",

author = "Rahaman, \{S. Z.\} and S. Maikap and Chiu, \{H. C.\} and Lin, \{C. H.\} and Wu, \{T. Y.\} and Chen, \{Y. S.\} and Tzeng, \{P. J.\} and F. Chen and Kao, \{M. J.\} and Tsai, \{M. J.\}",

year = "2009",

doi = "10.1109/IMW.2009.5090597",

language = "英语",

isbn = "9781424437610",

series = "2009 IEEE International Memory Workshop, IMW '09",

booktitle = "2009 IEEE International Memory Workshop, IMW '09",

note = "2009 IEEE International Memory Workshop, IMW '09 ; Conference date: 10-05-2009 Through 14-05-2009",

}

Rahaman, SZ, Maikap, S , Chiu, HC, Lin, CH, Wu, TY, Chen, YS, Tzeng, PJ, Chen, F, Kao, MJ & Tsai, MJ 2009, Low power operation of resistive switching memory device using novel W/Ge_0.4Se_0.6/Cu/Al structure. 於 2009 IEEE International Memory Workshop, IMW '09., 5090597, 2009 IEEE International Memory Workshop, IMW '09, 2009 IEEE International Memory Workshop, IMW '09, Monterey, CA, 美國, 10/05/09. https://doi.org/10.1109/IMW.2009.5090597

TY - GEN

T1 - Low power operation of resistive switching memory device using novel W/Ge0.4Se0.6/Cu/Al structure

AU - Rahaman, S. Z.

AU - Maikap, S.

AU - Chiu, H. C.

AU - Lin, C. H.

AU - Wu, T. Y.

AU - Chen, Y. S.

AU - Tzeng, P. J.

AU - Chen, F.

AU - Kao, M. J.

AU - Tsai, M. J.

PY - 2009

Y1 - 2009

N2 - Bipolar resistive switching memory device with a low power operation (200μA/1.3V) in a W/Ge0.4Se0.6/Cu/Al structure has been investigated. A stronger Cu chain formation can be observed by monitoring both the erase voltage and current. The low resistance state (RLow) decreases with increasing the programming current from 1nA to 500μA, which can be useful for multi-level of data storage. This resistive memory device has a large threshold voltage of ∼0.5V, good resistance ratio (R High/RLow) of 1.6×102, good endurance of >1.5×105 cycles, and excellent retention (>11 hours) with a resistance ratio of >1.3×102 at 150°C can be used in future nonvolatile memories.

AB - Bipolar resistive switching memory device with a low power operation (200μA/1.3V) in a W/Ge0.4Se0.6/Cu/Al structure has been investigated. A stronger Cu chain formation can be observed by monitoring both the erase voltage and current. The low resistance state (RLow) decreases with increasing the programming current from 1nA to 500μA, which can be useful for multi-level of data storage. This resistive memory device has a large threshold voltage of ∼0.5V, good resistance ratio (R High/RLow) of 1.6×102, good endurance of >1.5×105 cycles, and excellent retention (>11 hours) with a resistance ratio of >1.3×102 at 150°C can be used in future nonvolatile memories.

KW - Cu chain

KW - Electromigration and oxidation

KW - Nanoscale memory

KW - Resistive switching

UR - https://www.scopus.com/pages/publications/70349980492

U2 - 10.1109/IMW.2009.5090597

DO - 10.1109/IMW.2009.5090597

M3 - 会议稿件

AN - SCOPUS:70349980492

SN - 9781424437610

T3 - 2009 IEEE International Memory Workshop, IMW '09

BT - 2009 IEEE International Memory Workshop, IMW '09

T2 - 2009 IEEE International Memory Workshop, IMW '09

Y2 - 10 May 2009 through 14 May 2009

ER -