Low-temperature water gas shift reaction on Cu/SiO2 prepared by an atomic layer epitaxy technique

Ching Shiun Chen; Jarrn Horng Lin; Tzn Wen Lai

doi:10.1039/b807428c

Low-temperature water gas shift reaction on Cu/SiO₂ prepared by an atomic layer epitaxy technique

Ching Shiun Chen^*
, Jarrn Horng Lin
, Tzn Wen Lai

^*此作品的通信作者

通識中心

National University of Tainan Taiwan
Chang Gung University

研究成果: 期刊稿件 › 文章 › 同行評審

32 引文斯高帕斯（Scopus）

摘要

An atomic layer epitaxy technique was used to produce nanoscale 2.9-3.4 nm copper particles supported on silica, and the nanoscale Cu/SiO₂ catalysts can show surprisingly high activity for the water gas shift reaction, in comparison with the 5.6 wt% Pt/SiO₂ and 10.3 wt% Cu/SiO ₂ prepared by the impregnation method.

原文	英語
頁（從 - 到）	4983-4985
頁數	3
期刊	Chemical Communications
發行號	40
DOIs	https://doi.org/10.1039/b807428c
出版狀態	已出版 - 2008

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10.1039/b807428c

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引用此

@article{81289de5632e471d880b2440facef89b,

title = "Low-temperature water gas shift reaction on Cu/SiO2 prepared by an atomic layer epitaxy technique",

abstract = "An atomic layer epitaxy technique was used to produce nanoscale 2.9-3.4 nm copper particles supported on silica, and the nanoscale Cu/SiO2 catalysts can show surprisingly high activity for the water gas shift reaction, in comparison with the 5.6 wt\% Pt/SiO2 and 10.3 wt\% Cu/SiO 2 prepared by the impregnation method.",

author = "Chen, \{Ching Shiun\} and Lin, \{Jarrn Horng\} and Lai, \{Tzn Wen\}",

year = "2008",

doi = "10.1039/b807428c",

language = "英语",

pages = "4983--4985",

journal = "Chemical Communications",

issn = "1359-7345",

publisher = "Royal Society of Chemistry",

number = "40",

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TY - JOUR

T1 - Low-temperature water gas shift reaction on Cu/SiO2 prepared by an atomic layer epitaxy technique

AU - Chen, Ching Shiun

AU - Lin, Jarrn Horng

AU - Lai, Tzn Wen

PY - 2008

Y1 - 2008

N2 - An atomic layer epitaxy technique was used to produce nanoscale 2.9-3.4 nm copper particles supported on silica, and the nanoscale Cu/SiO2 catalysts can show surprisingly high activity for the water gas shift reaction, in comparison with the 5.6 wt% Pt/SiO2 and 10.3 wt% Cu/SiO 2 prepared by the impregnation method.

AB - An atomic layer epitaxy technique was used to produce nanoscale 2.9-3.4 nm copper particles supported on silica, and the nanoscale Cu/SiO2 catalysts can show surprisingly high activity for the water gas shift reaction, in comparison with the 5.6 wt% Pt/SiO2 and 10.3 wt% Cu/SiO 2 prepared by the impregnation method.

UR - https://www.scopus.com/pages/publications/62249147024

U2 - 10.1039/b807428c

DO - 10.1039/b807428c

M3 - 文章

AN - SCOPUS:62249147024

SN - 1359-7345

SP - 4983

EP - 4985

JO - Chemical Communications

JF - Chemical Communications

IS - 40

ER -

Low-temperature water gas shift reaction on Cu/SiO2 prepared by an atomic layer epitaxy technique

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Low-temperature water gas shift reaction on Cu/SiO₂ prepared by an atomic layer epitaxy technique