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Memory characteristics of IrOx metal nanocrystals embedded in high- κ Al2O3 films with IrOx metal gate

  • S. Maikap*
  • , W. Banerjee
  • , W. C. Li
  • , J. R. Yang
  • *此作品的通信作者
  • Chang Gung University
  • National Taiwan University

研究成果: 圖書/報告稿件的類型 › 會議稿件 › 同行評審

摘要

The memory characteristics of IrOx metal nanocrystals in an n-Si/SiO2/Al2O3/IrOx/Al 2O3/IrOx structure with a small EOT of ∼6 nm have been investigated. The IrOx metal nanocrystals with a small size of ∼3 nm and high-density of ∼0.7×1013/cm 2 have been observed. The enhanced memory characteristics with a large memory window of ΔV-4V at a small gate voltage of <5V and good endurance of 104 cycles are achieved due to the charge storage in the IrOx nanocrystals.

原文英語
主出版物標題2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009
頁面378-381
頁數4
出版狀態已出版 - 2009
事件2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009 - Genoa, 意大利
持續時間: 26 07 2009 → 30 07 2009

出版系列

名字2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009

Conference

Conference2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009
國家/地區意大利
城市Genoa
期間26/07/09 → 30/07/09

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