Metal-oxide-high- k -oxide-silicon memory structure using an Yb ₂O₃ charge trapping layer

Material Science

• Charge Trapping 100%
• Oxide 100%
• Metal Oxide 100%
• Silicon Memory 100%
• Silicon 66%
• Temperature 33%
• Surface Roughness 33%
• Silicate 33%
• Charge Carrier 33%

Chemistry

• Structure 100%
• Metal Oxide 100%
• Silicon Oxide 100%
• Voltage 33%
• Application 33%
• Time 33%
• Charge Carrier 33%
• Ambient Reaction Temperature 33%
• Surface Roughness 33%

Biochemistry, Genetics and Molecular Biology

• Memory 100%
• Time 20%
• Electric Potential 20%
• Surface Property 20%
• Room Temperature 20%