Minor magnesium doping in P-type layer of InGaN/GaN MQW LED to enhance electrical and optical properties

Meng Fu Shih; Yung Hsiang Lin; Chun Wei Liao; Cheng Ying Yen; Yi Lun Chou; Ray Ming Lin

doi:10.1109/ISDRS.2007.4422553

Minor magnesium doping in P-type layer of InGaN/GaN MQW LED to enhance electrical and optical properties

Meng Fu Shih^*, Yung Hsiang Lin, Chun Wei Liao, Cheng Ying Yen, Yi Lun Chou, Ray Ming Lin

^*此作品的通信作者

電子工程學系(含學碩博士班)

Chang Gung University

研究成果: 圖書/報告稿件的類型 › 會議稿件 › 同行評審

原文	英語
主出版物標題	2007 International Semiconductor Device Research Symposium, ISDRS
DOIs	https://doi.org/10.1109/ISDRS.2007.4422553
出版狀態	已出版 - 2007
事件	2007 International Semiconductor Device Research Symposium, ISDRS - College Park, MD, 美國持續時間: 12 12 2007 → 14 12 2007

出版系列

名字	2007 International Semiconductor Device Research Symposium, ISDRS

Conference

Conference	2007 International Semiconductor Device Research Symposium, ISDRS
國家/地區	美國
城市	College Park, MD
期間	12/12/07 → 14/12/07

存取文件

10.1109/ISDRS.2007.4422553

其它文件與鏈接

Link to publication in Scopus

引用此

Shih, M. F., Lin, Y. H., Liao, C. W., Yen, C. Y., Chou, Y. L., & Lin, R. M. (2007). Minor magnesium doping in P-type layer of InGaN/GaN MQW LED to enhance electrical and optical properties. 於 2007 International Semiconductor Device Research Symposium, ISDRS 文章 4422553 (2007 International Semiconductor Device Research Symposium, ISDRS). https://doi.org/10.1109/ISDRS.2007.4422553

@inproceedings{d2f9aa1eacbf40a8aa1346489069b7c9,

title = "Minor magnesium doping in P-type layer of InGaN/GaN MQW LED to enhance electrical and optical properties",

author = "Shih, {Meng Fu} and Lin, {Yung Hsiang} and Liao, {Chun Wei} and Yen, {Cheng Ying} and Chou, {Yi Lun} and Lin, {Ray Ming}",

year = "2007",

doi = "10.1109/ISDRS.2007.4422553",

language = "英语",

isbn = "1424418917",

series = "2007 International Semiconductor Device Research Symposium, ISDRS",

booktitle = "2007 International Semiconductor Device Research Symposium, ISDRS",

note = "2007 International Semiconductor Device Research Symposium, ISDRS ; Conference date: 12-12-2007 Through 14-12-2007",

}

Shih, MF, Lin, YH, Liao, CW, Yen, CY, Chou, YL & Lin, RM 2007, Minor magnesium doping in P-type layer of InGaN/GaN MQW LED to enhance electrical and optical properties. 於 2007 International Semiconductor Device Research Symposium, ISDRS., 4422553, 2007 International Semiconductor Device Research Symposium, ISDRS, 2007 International Semiconductor Device Research Symposium, ISDRS, College Park, MD, 美國, 12/12/07. https://doi.org/10.1109/ISDRS.2007.4422553

Minor magnesium doping in P-type layer of InGaN/GaN MQW LED to enhance electrical and optical properties. / Shih, Meng Fu; Lin, Yung Hsiang; Liao, Chun Wei 等.
2007 International Semiconductor Device Research Symposium, ISDRS. 2007. 4422553 (2007 International Semiconductor Device Research Symposium, ISDRS).

研究成果: 圖書/報告稿件的類型 › 會議稿件 › 同行評審

TY - GEN

T1 - Minor magnesium doping in P-type layer of InGaN/GaN MQW LED to enhance electrical and optical properties

AU - Shih, Meng Fu

AU - Lin, Yung Hsiang

AU - Liao, Chun Wei

AU - Yen, Cheng Ying

AU - Chou, Yi Lun

AU - Lin, Ray Ming

PY - 2007

Y1 - 2007

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U2 - 10.1109/ISDRS.2007.4422553

DO - 10.1109/ISDRS.2007.4422553

M3 - 会议稿件

AN - SCOPUS:45149112331

SN - 1424418917

SN - 9781424418916

T3 - 2007 International Semiconductor Device Research Symposium, ISDRS

BT - 2007 International Semiconductor Device Research Symposium, ISDRS

T2 - 2007 International Semiconductor Device Research Symposium, ISDRS

Y2 - 12 December 2007 through 14 December 2007

ER -