Modeling Charge Injection in MOS Analog Switches

Bing J. Sheu; Je Hurn Shieh; Mahesh Patil

doi:10.1109/TCS.1987.1086096

Modeling Charge Injection in MOS Analog Switches

Bing J. Sheu, Je Hurn Shieh, Mahesh Patil

University of Southern California

研究成果: 期刊稿件 › 文章 › 同行評審

36 引文斯高帕斯（Scopus）

摘要

—Charge injection in MOS switches has been analyzed. The analysis has been extended to the general case of including source resistance and source capacitance. Universal plots of percentage channel charge injected are presented. Normalized variables are used to facilitate usage of the plots. A small-geometry switch, slow switching rate, and small source resistance can help reduce the charge injection effect.

原文	英語
頁（從 - 到）	214-216
頁數	3
期刊	IEEE Transactions on Circuits and Systems
卷	34
發行號	2
DOIs	https://doi.org/10.1109/TCS.1987.1086096
出版狀態	已出版 - 02 1987
對外發佈	是

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Modeling Charge Injection in MOS Analog Switches

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