Modeling ferroelectric capacitors for memory applications

The modeling of ferroelectric capacitors for memory applications is discussed. Ferroelectric random access memory (FRAM) is a nonvolatile memory that features fast read/write operations and low-power, battery-packed SRAM. The FRAM cell stores data in a capacitor that uses ferroelectric film as dielectric material. The modeling of ferroelectric capacitor is to efficiently record the history of the capacitor and to accurately determine the next value of the polarization form its history, the current state and the trend to the applied voltage.