Modified transmission line model and its application to aluminum ohmic contacts with n-type GaN

N. C. Chen; P. H. Chang; A. P. Chiu; M. C. Wang; W. S. Feng; G. M. Wu; C. F. Shih; K. S. Liu

doi:10.1063/1.1704855

Modified transmission line model and its application to aluminum ohmic contacts with n-type GaN

N. C. Chen^*
, P. H. Chang
, A. P. Chiu
, M. C. Wang
, W. S. Feng
, G. M. Wu
, C. F. Shih
, K. S. Liu

^*此作品的通信作者

光電工程研究所(碩士班)

Chang Gung University
National Tsing Hua University

研究成果: 期刊稿件 › 文章 › 同行評審

12 引文斯高帕斯（Scopus）

摘要

A modified transmission line model (MTLM), applied to the n-type GaN ohmic contact measurement was developed. The model was proposed to preserve the advantages of process simplicity and to eliminate the possibility of obtaining misleading results. The ohmic contact pattern used in MTLM method existed during the fabrication of several devices, including the p-type ohmic bonding pad for AlGaInP light emitting diodes (LED) and the n-type ohmic contact for nitride-based LEDs. The resulting sheet resistance was found to be similar to that obtained by Hall measurement.

原文	英語
頁（從 - 到）	2584-2586
頁數	3
期刊	Applied Physics Letters
卷	84
發行號	14
DOIs	https://doi.org/10.1063/1.1704855
出版狀態	已出版 - 05 04 2004

存取文件

10.1063/1.1704855

其它文件與鏈接

Link to publication in Scopus

引用此

@article{4a69aed122784a698ca6b3cd959b7532,

title = "Modified transmission line model and its application to aluminum ohmic contacts with n-type GaN",

abstract = "A modified transmission line model (MTLM), applied to the n-type GaN ohmic contact measurement was developed. The model was proposed to preserve the advantages of process simplicity and to eliminate the possibility of obtaining misleading results. The ohmic contact pattern used in MTLM method existed during the fabrication of several devices, including the p-type ohmic bonding pad for AlGaInP light emitting diodes (LED) and the n-type ohmic contact for nitride-based LEDs. The resulting sheet resistance was found to be similar to that obtained by Hall measurement.",

author = "Chen, \{N. C.\} and Chang, \{P. H.\} and Chiu, \{A. P.\} and Wang, \{M. C.\} and Feng, \{W. S.\} and Wu, \{G. M.\} and Shih, \{C. F.\} and Liu, \{K. S.\}",

year = "2004",

month = apr,

day = "5",

doi = "10.1063/1.1704855",

language = "英语",

volume = "84",

pages = "2584--2586",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "14",

}

TY - JOUR

T1 - Modified transmission line model and its application to aluminum ohmic contacts with n-type GaN

AU - Chen, N. C.

AU - Chang, P. H.

AU - Chiu, A. P.

AU - Wang, M. C.

AU - Feng, W. S.

AU - Wu, G. M.

AU - Shih, C. F.

AU - Liu, K. S.

PY - 2004/4/5

Y1 - 2004/4/5

N2 - A modified transmission line model (MTLM), applied to the n-type GaN ohmic contact measurement was developed. The model was proposed to preserve the advantages of process simplicity and to eliminate the possibility of obtaining misleading results. The ohmic contact pattern used in MTLM method existed during the fabrication of several devices, including the p-type ohmic bonding pad for AlGaInP light emitting diodes (LED) and the n-type ohmic contact for nitride-based LEDs. The resulting sheet resistance was found to be similar to that obtained by Hall measurement.

AB - A modified transmission line model (MTLM), applied to the n-type GaN ohmic contact measurement was developed. The model was proposed to preserve the advantages of process simplicity and to eliminate the possibility of obtaining misleading results. The ohmic contact pattern used in MTLM method existed during the fabrication of several devices, including the p-type ohmic bonding pad for AlGaInP light emitting diodes (LED) and the n-type ohmic contact for nitride-based LEDs. The resulting sheet resistance was found to be similar to that obtained by Hall measurement.

UR - https://www.scopus.com/pages/publications/2342469935

U2 - 10.1063/1.1704855

DO - 10.1063/1.1704855

M3 - 文章

AN - SCOPUS:2342469935

SN - 0003-6951

VL - 84

SP - 2584

EP - 2586

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

ER -

Modified transmission line model and its application to aluminum ohmic contacts with n-type GaN

摘要

存取文件

其它文件與鏈接

指紋

引用此