TY - JOUR
T1 - Modulation and Refinement of In-N re-Bonding of InGaN through in Post-Flow during a Refined Temper Fire Treatment Process
AU - Liu, Tsung Yen
AU - Chen, Lung Chien
AU - Lee, Cheng Che
AU - Cheng, Yu
AU - Kuan, Chieh Hsiung
AU - Lin, Ray Ming
N1 - Publisher Copyright:
© 2013 IEEE.
PY - 2020
Y1 - 2020
N2 - In this article, we describe a subtle method for modulating and refining the indium-nitrogen (In-N) re-bonding effect of InGaN by employing an In post-flow during temper fire ( $\Delta T = 110\,^{\circ }\text{C}$ ) treatment. After optimizing the In flow rate and the temper fire treatment process, the In content in InGaN quantum wells (QWs) increased from 12.7 to 22.3% and the (102) epitaxy quality of InGaN improved, as revealed by the full-width at half-maximum (FWHM) of the X-ray diffractometry signal decreasing from 410 to 374 arcsec. In addition, the quality of a five InGaN/GaN multiple-QW epilayer surface also improved greatly when applying this technique. Merely by modulating the In post-flow rate (0, 5.6, 11.2, 16.8, 22.4, or $28.0~\mu $ mol/min), the InxGa1-xN photoluminescence signal (and FWHM) changed from 449 nm (58 nm) in the absence of In post-flow during the temper fire treatment process, to 523 nm (46 nm) when the In post-flow rate was $11.2~\mu $ mol/min, and to 534 nm (55 nm) when the In post-flow rate was $28.0~\mu $ mol/min. This technique is, therefore, effective at improving the InGaN quality and compensating for the In-N bond desorption rate.
AB - In this article, we describe a subtle method for modulating and refining the indium-nitrogen (In-N) re-bonding effect of InGaN by employing an In post-flow during temper fire ( $\Delta T = 110\,^{\circ }\text{C}$ ) treatment. After optimizing the In flow rate and the temper fire treatment process, the In content in InGaN quantum wells (QWs) increased from 12.7 to 22.3% and the (102) epitaxy quality of InGaN improved, as revealed by the full-width at half-maximum (FWHM) of the X-ray diffractometry signal decreasing from 410 to 374 arcsec. In addition, the quality of a five InGaN/GaN multiple-QW epilayer surface also improved greatly when applying this technique. Merely by modulating the In post-flow rate (0, 5.6, 11.2, 16.8, 22.4, or $28.0~\mu $ mol/min), the InxGa1-xN photoluminescence signal (and FWHM) changed from 449 nm (58 nm) in the absence of In post-flow during the temper fire treatment process, to 523 nm (46 nm) when the In post-flow rate was $11.2~\mu $ mol/min, and to 534 nm (55 nm) when the In post-flow rate was $28.0~\mu $ mol/min. This technique is, therefore, effective at improving the InGaN quality and compensating for the In-N bond desorption rate.
KW - GaN
KW - InGaN-based green LEDs
KW - Indium-nitrogen re-bonding
KW - metal-organic vapor phase epitaxy
KW - refinement
UR - http://www.scopus.com/inward/record.url?scp=85098332410&partnerID=8YFLogxK
U2 - 10.1109/ACCESS.2020.3045178
DO - 10.1109/ACCESS.2020.3045178
M3 - 文章
AN - SCOPUS:85098332410
SN - 2169-3536
VL - 8
SP - 224433
EP - 224438
JO - IEEE Access
JF - IEEE Access
M1 - 9296228
ER -