Monolithically Integrated GaN Power and RF ICs on 150mm Poly-AlN for Envelope Tracking Power Amplifier Applications

Chong Rong Huang; Hsien Chin Chiu; Chia Hao Liu; Hsiang Chun Wang; Hsuan Ling Kao; Ming Chin Chen; Chia Cheng Liu; Vladimir Odnoblyudov

Monolithically Integrated GaN Power and RF ICs on 150mm Poly-AlN for Envelope Tracking Power Amplifier Applications

Chong Rong Huang
, Hsien Chin Chiu^*
, Chia Hao Liu
, Hsiang Chun Wang
, Hsuan Ling Kao
, Ming Chin Chen
, Chia Cheng Liu
, Vladimir Odnoblyudov

^*此作品的通信作者

電子工程學系(含學碩博士班)

Chang Gung University
Unikorn Semiconductor Corporation
Inc.

研究成果: 圖書/報告稿件的類型 › 會議稿件 › 同行評審

摘要

This is the first comprehensive study on monolithically integrated GaN power and radio frequency (RF) integrated circuits (ICs) on GaN-on-poly-AlN (QST^TM) substrates. GaN power and RF ICs integration was feasible due to the reduced parasitics, thermally matched substrate of poly-AlN, high thermal conductivity, high mechanical strength, as well as the optimized GaN layer structure designs. The E/D-mode GaN low-voltage logic device and E-mode power device were realized to implement the soft-switching buck-converter. A 0.25-μm gate length T-shaped gate GaN RF high-electron-mobility transistor was adopted for the high-output power stage. Monolithically integrated GaN power and RF ICs on QST substrates results in a feasible single envelope-tracking power-amplifier chip with high thermal stability.

原文	英語
主出版物標題	CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers
發行者	CS Mantech
頁面	71-74
頁數	4
ISBN（電子）	9781893580312
出版狀態	已出版 - 2021
事件	35th Annual International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2021 - Orlando, Virtual, 美國持續時間: 24 05 2021 → 27 05 2021

出版系列

名字	CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers

Conference

Conference	35th Annual International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2021
國家/地區	美國
城市	Orlando, Virtual
期間	24/05/21 → 27/05/21

文獻附註

Publisher Copyright:
© 2021 CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers. All Rights Reserved.

UN SDG

此研究成果有助於以下永續發展目標

SDG9 工業、創新基礎建設

其它文件與鏈接

Link to publication in Scopus

引用此

Huang, C. R., Chiu, H. C., Liu, C. H., Wang, H. C., Kao, H. L., Chen, M. C., Liu, C. C., & Odnoblyudov, V. (2021). Monolithically Integrated GaN Power and RF ICs on 150mm Poly-AlN for Envelope Tracking Power Amplifier Applications. 於 CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers (頁 71-74). (CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers). CS Mantech.

Huang, Chong Rong ; Chiu, Hsien Chin ; Liu, Chia Hao 等. / Monolithically Integrated GaN Power and RF ICs on 150mm Poly-AlN for Envelope Tracking Power Amplifier Applications. CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers. CS Mantech, 2021. 頁 71-74 (CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers).

@inproceedings{be44a60e7a864143b323f84884f31f34,

title = "Monolithically Integrated GaN Power and RF ICs on 150mm Poly-AlN for Envelope Tracking Power Amplifier Applications",

abstract = "This is the first comprehensive study on monolithically integrated GaN power and radio frequency (RF) integrated circuits (ICs) on GaN-on-poly-AlN (QSTTM) substrates. GaN power and RF ICs integration was feasible due to the reduced parasitics, thermally matched substrate of poly-AlN, high thermal conductivity, high mechanical strength, as well as the optimized GaN layer structure designs. The E/D-mode GaN low-voltage logic device and E-mode power device were realized to implement the soft-switching buck-converter. A 0.25-μm gate length T-shaped gate GaN RF high-electron-mobility transistor was adopted for the high-output power stage. Monolithically integrated GaN power and RF ICs on QST substrates results in a feasible single envelope-tracking power-amplifier chip with high thermal stability.",

keywords = "Back barrier (B/B) layer, High thermal conductivity, QST substrate",

author = "Huang, \{Chong Rong\} and Chiu, \{Hsien Chin\} and Liu, \{Chia Hao\} and Wang, \{Hsiang Chun\} and Kao, \{Hsuan Ling\} and Chen, \{Ming Chin\} and Liu, \{Chia Cheng\} and Vladimir Odnoblyudov",

note = "Publisher Copyright: {\textcopyright} 2021 CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers. All Rights Reserved.; 35th Annual International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2021 ; Conference date: 24-05-2021 Through 27-05-2021",

year = "2021",

language = "英语",

series = "CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers",

publisher = "CS Mantech",

pages = "71--74",

booktitle = "CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers",

}

Huang, CR, Chiu, HC, Liu, CH, Wang, HC, Kao, HL, Chen, MC, Liu, CC & Odnoblyudov, V 2021, Monolithically Integrated GaN Power and RF ICs on 150mm Poly-AlN for Envelope Tracking Power Amplifier Applications. 於 CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers. CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers, CS Mantech, 頁 71-74, 35th Annual International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2021, Orlando, Virtual, 美國, 24/05/21.

Monolithically Integrated GaN Power and RF ICs on 150mm Poly-AlN for Envelope Tracking Power Amplifier Applications. / Huang, Chong Rong; Chiu, Hsien Chin; Liu, Chia Hao 等.
CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers. CS Mantech, 2021. p. 71-74 (CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers).

研究成果: 圖書/報告稿件的類型 › 會議稿件 › 同行評審

TY - GEN

T1 - Monolithically Integrated GaN Power and RF ICs on 150mm Poly-AlN for Envelope Tracking Power Amplifier Applications

AU - Huang, Chong Rong

AU - Chiu, Hsien Chin

AU - Liu, Chia Hao

AU - Wang, Hsiang Chun

AU - Kao, Hsuan Ling

AU - Chen, Ming Chin

AU - Liu, Chia Cheng

AU - Odnoblyudov, Vladimir

PY - 2021

Y1 - 2021

N2 - This is the first comprehensive study on monolithically integrated GaN power and radio frequency (RF) integrated circuits (ICs) on GaN-on-poly-AlN (QSTTM) substrates. GaN power and RF ICs integration was feasible due to the reduced parasitics, thermally matched substrate of poly-AlN, high thermal conductivity, high mechanical strength, as well as the optimized GaN layer structure designs. The E/D-mode GaN low-voltage logic device and E-mode power device were realized to implement the soft-switching buck-converter. A 0.25-μm gate length T-shaped gate GaN RF high-electron-mobility transistor was adopted for the high-output power stage. Monolithically integrated GaN power and RF ICs on QST substrates results in a feasible single envelope-tracking power-amplifier chip with high thermal stability.

AB - This is the first comprehensive study on monolithically integrated GaN power and radio frequency (RF) integrated circuits (ICs) on GaN-on-poly-AlN (QSTTM) substrates. GaN power and RF ICs integration was feasible due to the reduced parasitics, thermally matched substrate of poly-AlN, high thermal conductivity, high mechanical strength, as well as the optimized GaN layer structure designs. The E/D-mode GaN low-voltage logic device and E-mode power device were realized to implement the soft-switching buck-converter. A 0.25-μm gate length T-shaped gate GaN RF high-electron-mobility transistor was adopted for the high-output power stage. Monolithically integrated GaN power and RF ICs on QST substrates results in a feasible single envelope-tracking power-amplifier chip with high thermal stability.

KW - Back barrier (B/B) layer

KW - High thermal conductivity

KW - QST substrate

UR - https://www.scopus.com/pages/publications/85124502427

M3 - 会议稿件

AN - SCOPUS:85124502427

T3 - CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers

SP - 71

EP - 74

BT - CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers

PB - CS Mantech

T2 - 35th Annual International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2021

Y2 - 24 May 2021 through 27 May 2021

ER -

Huang CR, Chiu HC, Liu CH, Wang HC, Kao HL, Chen MC 等. Monolithically Integrated GaN Power and RF ICs on 150mm Poly-AlN for Envelope Tracking Power Amplifier Applications. 於 CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers. CS Mantech. 2021. p. 71-74. (CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers).

Monolithically Integrated GaN Power and RF ICs on 150mm Poly-AlN for Envelope Tracking Power Amplifier Applications

摘要

出版系列

Conference

文獻附註

UN SDG

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