Multilevel ultra-fast and disturb-free flash memory with double embedded Au and Gd2O3 nanocrystals

Jer Chyi Wang; Chih Ting Lin; Po Wei Huang; Li Chun Chang; Chao Sung Lai

doi:10.1109/VLSI-TSA.2013.6545593

Multilevel ultra-fast and disturb-free flash memory with double embedded Au and Gd₂O₃ nanocrystals

Jer Chyi Wang, Chih Ting Lin, Po Wei Huang, Li Chun Chang, Chao Sung Lai

電子工程學系(含學碩博士班)

研究成果: 圖書/報告稿件的類型 › 會議稿件 › 同行評審

摘要

Ultra-fast (μsec) and disturb-free multilevel flash memory was demonstrated by a novel gold and gadolinium oxide bi-nanocrystals (BNCs). Through nanocrystal band engineering design and using a new operation scheme, the BNCs memory exhibits an ultra-fast program and erase speed for 3.5μsec and 5μsec respectively, which is three orders faster than the conventional one. A disturb-free behavior is achieved for operating under -14 to 9 V. The threshold voltage memory window (2.78 V for 4 bits) closure is only 7.3% under 10⁸ cycling and with only 10% charge loss for 10⁴ sec retention. The activation energy of charge loss and trapped charge centroid were extracted to identify the nanocrystal band engineering and carrier injection mechanism.

原文	英語
主出版物標題	2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013
DOIs	https://doi.org/10.1109/VLSI-TSA.2013.6545593
出版狀態	已出版 - 2013
事件	2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013 - Hsinchu, 台灣持續時間: 22 04 2013 → 24 04 2013

出版系列

名字	2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013

Conference

Conference	2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013
國家/地區	台灣
城市	Hsinchu
期間	22/04/13 → 24/04/13

存取文件

10.1109/VLSI-TSA.2013.6545593

其它文件與鏈接

Link to publication in Scopus

引用此

Wang, J. C., Lin, C. T., Huang, P. W., Chang, L. C., & Lai, C. S. (2013). Multilevel ultra-fast and disturb-free flash memory with double embedded Au and Gd₂O₃ nanocrystals. 於 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013 文章 6545593 (2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013). https://doi.org/10.1109/VLSI-TSA.2013.6545593

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title = "Multilevel ultra-fast and disturb-free flash memory with double embedded Au and Gd2O3 nanocrystals",

abstract = "Ultra-fast (μsec) and disturb-free multilevel flash memory was demonstrated by a novel gold and gadolinium oxide bi-nanocrystals (BNCs). Through nanocrystal band engineering design and using a new operation scheme, the BNCs memory exhibits an ultra-fast program and erase speed for 3.5μsec and 5μsec respectively, which is three orders faster than the conventional one. A disturb-free behavior is achieved for operating under -14 to 9 V. The threshold voltage memory window (2.78 V for 4 bits) closure is only 7.3% under 108 cycling and with only 10% charge loss for 104 sec retention. The activation energy of charge loss and trapped charge centroid were extracted to identify the nanocrystal band engineering and carrier injection mechanism.",

author = "Wang, {Jer Chyi} and Lin, {Chih Ting} and Huang, {Po Wei} and Chang, {Li Chun} and Lai, {Chao Sung}",

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Wang, JC, Lin, CT, Huang, PW, Chang, LC & Lai, CS 2013, Multilevel ultra-fast and disturb-free flash memory with double embedded Au and Gd₂O₃ nanocrystals. 於 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013., 6545593, 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013, 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013, Hsinchu, 台灣, 22/04/13. https://doi.org/10.1109/VLSI-TSA.2013.6545593

Multilevel ultra-fast and disturb-free flash memory with double embedded Au and Gd₂O₃ nanocrystals. / Wang, Jer Chyi; Lin, Chih Ting; Huang, Po Wei 等.
2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013. 2013. 6545593 (2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013).

研究成果: 圖書/報告稿件的類型 › 會議稿件 › 同行評審

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AB - Ultra-fast (μsec) and disturb-free multilevel flash memory was demonstrated by a novel gold and gadolinium oxide bi-nanocrystals (BNCs). Through nanocrystal band engineering design and using a new operation scheme, the BNCs memory exhibits an ultra-fast program and erase speed for 3.5μsec and 5μsec respectively, which is three orders faster than the conventional one. A disturb-free behavior is achieved for operating under -14 to 9 V. The threshold voltage memory window (2.78 V for 4 bits) closure is only 7.3% under 108 cycling and with only 10% charge loss for 104 sec retention. The activation energy of charge loss and trapped charge centroid were extracted to identify the nanocrystal band engineering and carrier injection mechanism.

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Wang JC, Lin CT, Huang PW, Chang LC, Lai CS. Multilevel ultra-fast and disturb-free flash memory with double embedded Au and Gd₂O₃ nanocrystals. 於 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013. 2013. 6545593. (2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013). doi: 10.1109/VLSI-TSA.2013.6545593