Nanothick layer transfer of hydrogen-implanted wafer using polysilicon sacrificial layer

C. H. Huang*, C. L. Chang, Y. Y. Yang, T. Suryasindhu, W. C. Liao, Y. H. Su, P. W. Li, C. Y. Liu, C. S. Lai, J. H. Ting, C. S. Chu, C. S. Lee, T. H. Lee

*此作品的通信作者

研究成果: 圖書/報告稿件的類型會議稿件同行評審

摘要

A fabrication method of 2-D nanostructure materials applied for forming nanothick SOI materials without using post-thinning processes is presented in this paper. The thickness of SOI layer is precisely controlled by a polysilicon layer as a sacrificial layer in the implantation step to acquire a desirable implant depth. Polysilicon layer was initially deposited on the thermal oxidized surface of silicon wafer prior to the ion implantation step with 4×1016 /cm-2,160KeV, H2+ ions. The as-implanted wafer was contained a hydrogen-rich buried layer which depth from the top surface is less than 100 nm. Before this as-implanted wafer being bonded with a handle wafer, the polysilicon layer was removed by a wet etching method. A nanothick silicon layer was then successfully transferred onto a handle wafer under 10-minute microwave irradiation after the bonding step. The thickness of the final transferred silicon layer was 100 nm measured by transmission electron microscopy (TEM).

原文英語
主出版物標題Nanomanufacturing
發行者Materials Research Society
頁面84-89
頁數6
ISBN(列印)1558998780, 9781558998780
DOIs
出版狀態已出版 - 2006
事件2006 MRS Spring Meeting - San Francisco, CA, 美國
持續時間: 18 04 200619 04 2006

出版系列

名字Materials Research Society Symposium Proceedings
921
ISSN(列印)0272-9172

Conference

Conference2006 MRS Spring Meeting
國家/地區美國
城市San Francisco, CA
期間18/04/0619/04/06

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