Nitridation of the Stacked Poly-Si Gate to Suppress the Boron Penetration in pMOS

Yung Hao Lin; Chao Sung Lai; Chung Len Lee; Tan Fu Lei; Tien Sheng Chao

doi:10.1109/55.790724

Nitridation of the Stacked Poly-Si Gate to Suppress the Boron Penetration in pMOS

Yung Hao Lin
, Chao Sung Lai
, Chung Len Lee
, Tan Fu Lei
, Tien Sheng Chao

National Yang Ming Chiao Tung University
National Nano Device Laboratories Taiwan

研究成果: 期刊稿件 › 文章 › 同行評審

11 引文斯高帕斯（Scopus）

摘要

Nitridation to create nitrogen-rich layers in-between the stacked layers of the poly-Si gate to suppress the boron penetration for pMOS with the gate BF 2+ -implantation is proposed and demonstrated. The MOS capacitors fabricated by using this nitridized stacked poly-Si gate have better thermal stability and much improved electrical characteristics.

原文	英語
頁（從 - 到）	248-249
頁數	2
期刊	IEEE Electron Device Letters
卷	16
發行號	6
DOIs	https://doi.org/10.1109/55.790724
出版狀態	已出版 - 06 1995
對外發佈	是

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abstract = "Nitridation to create nitrogen-rich layers in-between the stacked layers of the poly-Si gate to suppress the boron penetration for pMOS with the gate BF 2+ -implantation is proposed and demonstrated. The MOS capacitors fabricated by using this nitridized stacked poly-Si gate have better thermal stability and much improved electrical characteristics.",

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AU - Lee, Chung Len

AU - Lei, Tan Fu

AU - Chao, Tien Sheng

PY - 1995/6

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N2 - Nitridation to create nitrogen-rich layers in-between the stacked layers of the poly-Si gate to suppress the boron penetration for pMOS with the gate BF 2+ -implantation is proposed and demonstrated. The MOS capacitors fabricated by using this nitridized stacked poly-Si gate have better thermal stability and much improved electrical characteristics.

AB - Nitridation to create nitrogen-rich layers in-between the stacked layers of the poly-Si gate to suppress the boron penetration for pMOS with the gate BF 2+ -implantation is proposed and demonstrated. The MOS capacitors fabricated by using this nitridized stacked poly-Si gate have better thermal stability and much improved electrical characteristics.

UR - https://www.scopus.com/pages/publications/0029324282

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DO - 10.1109/55.790724

M3 - 文章

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JO - IEEE Electron Device Letters

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Nitridation of the Stacked Poly-Si Gate to Suppress the Boron Penetration in pMOS

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