TY - JOUR
T1 - Nitride light-emitting diodes grown on Si (111) using a TiN template
AU - Chen, N. C.
AU - Lien, W. C.
AU - Shih, C. F.
AU - Chang, P. H.
AU - Wang, T. W.
AU - Wu, M. C.
PY - 2006
Y1 - 2006
N2 - Nitride light-emitting diodes (LEDs) are grown on a Si (111) substrate with a TiN template. Transmission electron microscopy and x-ray diffraction indicate that the epitaxial relation follows Si (1,1,1) ∥TiN (1,1,1) ∥AlN (0,0,1), Si [1,1,0] ∥TiN [1,1,0], and Si [0,0,1] ∥TiN [0,0,1]. The reflectance measurement and simulation results indicate that the TiN can be adopted as a reflector to mitigate the substrate absorption problem, thus increasing the extraction efficiency of nitride LEDs grown on Si.
AB - Nitride light-emitting diodes (LEDs) are grown on a Si (111) substrate with a TiN template. Transmission electron microscopy and x-ray diffraction indicate that the epitaxial relation follows Si (1,1,1) ∥TiN (1,1,1) ∥AlN (0,0,1), Si [1,1,0] ∥TiN [1,1,0], and Si [0,0,1] ∥TiN [0,0,1]. The reflectance measurement and simulation results indicate that the TiN can be adopted as a reflector to mitigate the substrate absorption problem, thus increasing the extraction efficiency of nitride LEDs grown on Si.
UR - http://www.scopus.com/inward/record.url?scp=33646705854&partnerID=8YFLogxK
U2 - 10.1063/1.2202389
DO - 10.1063/1.2202389
M3 - 文章
AN - SCOPUS:33646705854
SN - 0003-6951
VL - 88
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 19
M1 - 191110
ER -