Nitride light-emitting diodes grown on Si (111) using a TiN template

N. C. Chen; W. C. Lien; C. F. Shih; P. H. Chang; T. W. Wang; M. C. Wu

doi:10.1063/1.2202389

Nitride light-emitting diodes grown on Si (111) using a TiN template

N. C. Chen^*
, W. C. Lien
, C. F. Shih
, P. H. Chang
, T. W. Wang
, M. C. Wu

^*此作品的通信作者

光電工程研究所(碩士班)

研究成果: 期刊稿件 › 文章 › 同行評審

8 引文斯高帕斯（Scopus）

摘要

Nitride light-emitting diodes (LEDs) are grown on a Si (111) substrate with a TiN template. Transmission electron microscopy and x-ray diffraction indicate that the epitaxial relation follows Si (1,1,1) ∥TiN (1,1,1) ∥AlN (0,0,1), Si [1,1,0] ∥TiN [1,1,0], and Si [0,0,1] ∥TiN [0,0,1]. The reflectance measurement and simulation results indicate that the TiN can be adopted as a reflector to mitigate the substrate absorption problem, thus increasing the extraction efficiency of nitride LEDs grown on Si.

原文	英語
文章編號	191110
期刊	Applied Physics Letters
卷	88
發行號	19
DOIs	https://doi.org/10.1063/1.2202389
出版狀態	已出版 - 2006

存取文件

10.1063/1.2202389

其它文件與鏈接

Link to publication in Scopus

引用此

@article{976a952caaae423aae2128080da7d672,

title = "Nitride light-emitting diodes grown on Si (111) using a TiN template",

abstract = "Nitride light-emitting diodes (LEDs) are grown on a Si (111) substrate with a TiN template. Transmission electron microscopy and x-ray diffraction indicate that the epitaxial relation follows Si (1,1,1) ∥TiN (1,1,1) ∥AlN (0,0,1), Si [1,1,0] ∥TiN [1,1,0], and Si [0,0,1] ∥TiN [0,0,1]. The reflectance measurement and simulation results indicate that the TiN can be adopted as a reflector to mitigate the substrate absorption problem, thus increasing the extraction efficiency of nitride LEDs grown on Si.",

author = "Chen, \{N. C.\} and Lien, \{W. C.\} and Shih, \{C. F.\} and Chang, \{P. H.\} and Wang, \{T. W.\} and Wu, \{M. C.\}",

year = "2006",

doi = "10.1063/1.2202389",

language = "英语",

volume = "88",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "19",

}

TY - JOUR

T1 - Nitride light-emitting diodes grown on Si (111) using a TiN template

AU - Chen, N. C.

AU - Lien, W. C.

AU - Shih, C. F.

AU - Chang, P. H.

AU - Wang, T. W.

AU - Wu, M. C.

PY - 2006

Y1 - 2006

N2 - Nitride light-emitting diodes (LEDs) are grown on a Si (111) substrate with a TiN template. Transmission electron microscopy and x-ray diffraction indicate that the epitaxial relation follows Si (1,1,1) ∥TiN (1,1,1) ∥AlN (0,0,1), Si [1,1,0] ∥TiN [1,1,0], and Si [0,0,1] ∥TiN [0,0,1]. The reflectance measurement and simulation results indicate that the TiN can be adopted as a reflector to mitigate the substrate absorption problem, thus increasing the extraction efficiency of nitride LEDs grown on Si.

AB - Nitride light-emitting diodes (LEDs) are grown on a Si (111) substrate with a TiN template. Transmission electron microscopy and x-ray diffraction indicate that the epitaxial relation follows Si (1,1,1) ∥TiN (1,1,1) ∥AlN (0,0,1), Si [1,1,0] ∥TiN [1,1,0], and Si [0,0,1] ∥TiN [0,0,1]. The reflectance measurement and simulation results indicate that the TiN can be adopted as a reflector to mitigate the substrate absorption problem, thus increasing the extraction efficiency of nitride LEDs grown on Si.

UR - https://www.scopus.com/pages/publications/33646705854

U2 - 10.1063/1.2202389

DO - 10.1063/1.2202389

M3 - 文章

AN - SCOPUS:33646705854

SN - 0003-6951

VL - 88

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

M1 - 191110

ER -

Nitride light-emitting diodes grown on Si (111) using a TiN template

摘要

存取文件

其它文件與鏈接

指紋

引用此