NO/O2/NO plasma grown oxynitride films on silicon

S. Maikap; S. K. Ray; C. K. Maiti

NO/O₂/NO plasma grown oxynitride films on silicon

S. Maikap^*
, S. K. Ray
, C. K. Maiti

^*此作品的通信作者

Indian Institute of Technology Kharagpur

研究成果: 期刊稿件 › 會議文章 › 同行評審

4 引文斯高帕斯（Scopus）

摘要

The electrical properties of high quality ultrathin (<100 angstroms) oxide and oxynitride films grown on silicon at low temperature using O₂, NO and NO/O₂/NO-plasma are investigated. A significant improvement in the dielectric endurance and charge trapping behaviour under Fowler-Nordheim constant current is observed for NO/O₂/NO grown oxynitride films. A three-step oxidation process for nitrogen incorporation at the surface and interface exhibited excellent nt properties in terms of interface state generation and charge trapping.

原文	英語
頁（從 - 到）	I/-
期刊	Proceedings of SPIE - The International Society for Optical Engineering
卷	3975
出版狀態	已出版 - 2000
對外發佈	是
事件	IWPSD-99: The 10th International Workshop on the Physics of Semiconductor Devices - New Delhi, India 持續時間: 14 12 1999 → 18 12 1999

其它文件與鏈接

Link to publication in Scopus

引用此

@article{63ceb74cfcb947e58d06f8d5c47a63dc,

title = "NO/O2/NO plasma grown oxynitride films on silicon",

abstract = "The electrical properties of high quality ultrathin (<100 angstroms) oxide and oxynitride films grown on silicon at low temperature using O2, NO and NO/O2/NO-plasma are investigated. A significant improvement in the dielectric endurance and charge trapping behaviour under Fowler-Nordheim constant current is observed for NO/O2/NO grown oxynitride films. A three-step oxidation process for nitrogen incorporation at the surface and interface exhibited excellent nt properties in terms of interface state generation and charge trapping.",

author = "S. Maikap and Ray, \{S. K.\} and Maiti, \{C. K.\}",

year = "2000",

language = "英语",

volume = "3975",

pages = "I/--",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "IWPSD-99: The 10th International Workshop on the Physics of Semiconductor Devices ; Conference date: 14-12-1999 Through 18-12-1999",

}

TY - JOUR

T1 - NO/O2/NO plasma grown oxynitride films on silicon

AU - Maikap, S.

AU - Ray, S. K.

AU - Maiti, C. K.

PY - 2000

Y1 - 2000

N2 - The electrical properties of high quality ultrathin (<100 angstroms) oxide and oxynitride films grown on silicon at low temperature using O2, NO and NO/O2/NO-plasma are investigated. A significant improvement in the dielectric endurance and charge trapping behaviour under Fowler-Nordheim constant current is observed for NO/O2/NO grown oxynitride films. A three-step oxidation process for nitrogen incorporation at the surface and interface exhibited excellent nt properties in terms of interface state generation and charge trapping.

AB - The electrical properties of high quality ultrathin (<100 angstroms) oxide and oxynitride films grown on silicon at low temperature using O2, NO and NO/O2/NO-plasma are investigated. A significant improvement in the dielectric endurance and charge trapping behaviour under Fowler-Nordheim constant current is observed for NO/O2/NO grown oxynitride films. A three-step oxidation process for nitrogen incorporation at the surface and interface exhibited excellent nt properties in terms of interface state generation and charge trapping.

UR - https://www.scopus.com/pages/publications/0033726115

M3 - 会议文章

AN - SCOPUS:0033726115

SN - 0277-786X

VL - 3975

SP - I/-

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - IWPSD-99: The 10th International Workshop on the Physics of Semiconductor Devices

Y2 - 14 December 1999 through 18 December 1999

ER -

NO/O2/NO plasma grown oxynitride films on silicon

摘要

其它文件與鏈接

指紋

引用此

NO/O₂/NO plasma grown oxynitride films on silicon