@inproceedings{1de9db83d35c466493409c679ee847fc,
title = "Novel flash ion sensitive field effect transistor for chemical sensor applications",
abstract = "Electrolyte-insulator-semiconductor (EIS) devices with programmable Sm 2O 3/Si 3N 4/SiO 2 and HfO 2/gadolinium oxide nanocrystals (Gd 2O 3-NCs)/SiO 2 structures are demonstrated for pH detection. The proposed programmable EIS sensors with multiple sensing membranes exhibit a high pH sensitivity (larger than the ideal Nernst response, 59.16 mV/pH at 25°C) owing to the hydrogen ions attraction by electrons trapped within the embedded trapping layers (Si 3N 4 and Gd 2O 3-NCs) after programming. When compared with the conventional EIS devices, the programmable EIS sensors with programming provide the possibility for the small pH fluctuation detection and can be used in future pH sensor applications owing to its high pH sensing response.",
author = "Lai, {Chao Sung} and Lu, {Tseng Fu} and Wang, {Jer Chyi}",
year = "2011",
doi = "10.1109/ASICON.2011.6157238",
language = "英语",
isbn = "9781612841908",
series = "Proceedings of International Conference on ASIC",
pages = "528--530",
booktitle = "Proceedings - 2011 IEEE 9th International Conference on ASIC, ASICON 2011",
note = "2011 IEEE 9th International Conference on ASIC, ASICON 2011 ; Conference date: 25-10-2011 Through 28-10-2011",
}