Novel Gadolinium Oxide Nanocrystal with Hafnium Oxide Trapping Layer Nonvolatile Memory Using Al2O3/SiO2 Dual Tunneling Layer

研究成果: 會議稿件的類型 › 會議論文

原文	美式英語
出版狀態	已出版 - 2011
事件	Solid State Devices and Materials (SSDM 2011) - Nagano, Japan 持續時間: 28 09 2011 → 30 09 2011

Conference	Solid State Devices and Materials (SSDM 2011)
期間	28/09/11 → 30/09/11

引用此

@conference{ea905c5828ab477398b5188562e1b373,

title = "Novel Gadolinium Oxide Nanocrystal with Hafnium Oxide Trapping Layer Nonvolatile Memory Using Al2O3/SiO2 Dual Tunneling Layer",

author = "Jer-Chyi Wang and Chih-Ting Lin and Chia-Hsin Chen and Chao-Sung Lai and Po-Wei Huang",

year = "2011",

language = "American English",

note = "Solid State Devices and Materials (SSDM 2011) ; Conference date: 28-09-2011 Through 30-09-2011",

}

TY - CONF

T1 - Novel Gadolinium Oxide Nanocrystal with Hafnium Oxide Trapping Layer Nonvolatile Memory Using Al2O3/SiO2 Dual Tunneling Layer

AU - Wang, Jer-Chyi

AU - Lin, Chih-Ting

AU - Chen, Chia-Hsin

AU - Lai, Chao-Sung

AU - Huang, Po-Wei

PY - 2011

Y1 - 2011

M3 - Proceeding

T2 - Solid State Devices and Materials (SSDM 2011)

Y2 - 28 September 2011 through 30 September 2011

ER -