Novel implantation mode application in FinFET structure

Ger Pin Lin; Ching I. Li; Po Heng Lin; Chih Ming Tai; Ruey Dar Chang

doi:10.1109/IIT.2014.6939991

Novel implantation mode application in FinFET structure

Ger Pin Lin^*
, Ching I. Li
, Po Heng Lin
, Chih Ming Tai
, Ruey Dar Chang

^*此作品的通信作者

電子工程學系(含學碩博士班)

Advanced Ion Beam Technology Inc.
Chang Gung University

研究成果: 圖書/報告稿件的類型 › 會議稿件 › 同行評審

1 引文斯高帕斯（Scopus）

摘要

Multiple-gate FETs such as FinFETs would be adopted at the 22nm technology generation and beyond, owing to the better control of short-channel effects (SCEs) in high-volume manufacturing. In this paper, we present a novel implantation mode called 'FlexScan' that consists of a series of various rotated angles. We perform the implant with FlexScan mode by Monte-Carlo simulation. FlexScan shows more conformal doping distribution in the fin structure. We expect that it could reduce device leakage and device variation caused from random doping distribution. The FlexScan mode could be used for 3D device doping process needed conformal doping profile.

原文	英語
主出版物標題	Proceedings of the International Conference on Ion Implantation Technology
編輯	Mulpuri V. Rao
發行者	Institute of Electrical and Electronics Engineers Inc.
ISBN（電子）	9781479952120
DOIs	https://doi.org/10.1109/IIT.2014.6939991
出版狀態	已出版 - 29 10 2014
事件	20th International Conference on Ion Implantation Technology, IIT 2014 - Portland, 美國持續時間: 30 06 2014 → 04 07 2014

出版系列

名字	Proceedings of the International Conference on Ion Implantation Technology

Conference

Conference	20th International Conference on Ion Implantation Technology, IIT 2014
國家/地區	美國
城市	Portland
期間	30/06/14 → 04/07/14

文獻附註

Publisher Copyright:
© 2014 IEEE.

存取文件

10.1109/IIT.2014.6939991

其它文件與鏈接

Link to publication in Scopus

引用此

Lin, G. P., Li, C. I., Lin, P. H., Tai, C. M., & Chang, R. D. (2014). Novel implantation mode application in FinFET structure. 於 M. V. Rao (編輯), Proceedings of the International Conference on Ion Implantation Technology 文章 6939991 (Proceedings of the International Conference on Ion Implantation Technology). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IIT.2014.6939991

@inproceedings{75125f2c6eee4c9a8769753ccf5f5b51,

title = "Novel implantation mode application in FinFET structure",

abstract = "Multiple-gate FETs such as FinFETs would be adopted at the 22nm technology generation and beyond, owing to the better control of short-channel effects (SCEs) in high-volume manufacturing. In this paper, we present a novel implantation mode called 'FlexScan' that consists of a series of various rotated angles. We perform the implant with FlexScan mode by Monte-Carlo simulation. FlexScan shows more conformal doping distribution in the fin structure. We expect that it could reduce device leakage and device variation caused from random doping distribution. The FlexScan mode could be used for 3D device doping process needed conformal doping profile.",

keywords = "FinFET, Monte-Carlo simulation, conformal, ion implant",

author = "Lin, \{Ger Pin\} and Li, \{Ching I.\} and Lin, \{Po Heng\} and Tai, \{Chih Ming\} and Chang, \{Ruey Dar\}",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 20th International Conference on Ion Implantation Technology, IIT 2014 ; Conference date: 30-06-2014 Through 04-07-2014",

year = "2014",

month = oct,

day = "29",

doi = "10.1109/IIT.2014.6939991",

language = "英语",

series = "Proceedings of the International Conference on Ion Implantation Technology",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

editor = "Rao, \{Mulpuri V.\}",

booktitle = "Proceedings of the International Conference on Ion Implantation Technology",

address = "美国",

}

Lin, GP, Li, CI, Lin, PH, Tai, CM & Chang, RD 2014, Novel implantation mode application in FinFET structure. 於 MV Rao (編輯), Proceedings of the International Conference on Ion Implantation Technology., 6939991, Proceedings of the International Conference on Ion Implantation Technology, Institute of Electrical and Electronics Engineers Inc., 20th International Conference on Ion Implantation Technology, IIT 2014, Portland, 美國, 30/06/14. https://doi.org/10.1109/IIT.2014.6939991

Novel implantation mode application in FinFET structure. / Lin, Ger Pin; Li, Ching I.; Lin, Po Heng 等.
Proceedings of the International Conference on Ion Implantation Technology. 編輯 / Mulpuri V. Rao. Institute of Electrical and Electronics Engineers Inc., 2014. 6939991 (Proceedings of the International Conference on Ion Implantation Technology).

研究成果: 圖書/報告稿件的類型 › 會議稿件 › 同行評審

TY - GEN

T1 - Novel implantation mode application in FinFET structure

AU - Lin, Ger Pin

AU - Li, Ching I.

AU - Lin, Po Heng

AU - Tai, Chih Ming

AU - Chang, Ruey Dar

PY - 2014/10/29

Y1 - 2014/10/29

N2 - Multiple-gate FETs such as FinFETs would be adopted at the 22nm technology generation and beyond, owing to the better control of short-channel effects (SCEs) in high-volume manufacturing. In this paper, we present a novel implantation mode called 'FlexScan' that consists of a series of various rotated angles. We perform the implant with FlexScan mode by Monte-Carlo simulation. FlexScan shows more conformal doping distribution in the fin structure. We expect that it could reduce device leakage and device variation caused from random doping distribution. The FlexScan mode could be used for 3D device doping process needed conformal doping profile.

AB - Multiple-gate FETs such as FinFETs would be adopted at the 22nm technology generation and beyond, owing to the better control of short-channel effects (SCEs) in high-volume manufacturing. In this paper, we present a novel implantation mode called 'FlexScan' that consists of a series of various rotated angles. We perform the implant with FlexScan mode by Monte-Carlo simulation. FlexScan shows more conformal doping distribution in the fin structure. We expect that it could reduce device leakage and device variation caused from random doping distribution. The FlexScan mode could be used for 3D device doping process needed conformal doping profile.

KW - FinFET

KW - Monte-Carlo simulation

KW - conformal

KW - ion implant

UR - https://www.scopus.com/pages/publications/84910092730

U2 - 10.1109/IIT.2014.6939991

DO - 10.1109/IIT.2014.6939991

M3 - 会议稿件

AN - SCOPUS:84910092730

T3 - Proceedings of the International Conference on Ion Implantation Technology

BT - Proceedings of the International Conference on Ion Implantation Technology

A2 - Rao, Mulpuri V.

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 20th International Conference on Ion Implantation Technology, IIT 2014

Y2 - 30 June 2014 through 4 July 2014

ER -

Lin GP, Li CI, Lin PH, Tai CM, Chang RD. Novel implantation mode application in FinFET structure. 於 Rao MV, 編輯, Proceedings of the International Conference on Ion Implantation Technology. Institute of Electrical and Electronics Engineers Inc. 2014. 6939991. (Proceedings of the International Conference on Ion Implantation Technology). doi: 10.1109/IIT.2014.6939991

Novel implantation mode application in FinFET structure

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