TY - JOUR
T1 - Novel ultra-low voltage and high-speed programming/erasing schemes for SONOS flash memory with excellent data retention
AU - Chung, Steve S.
AU - Tseng, Y. H.
AU - Lai, C. S.
AU - Hsu, Y.
AU - Ho, Eric
AU - Chen, Terry
AU - Peng, L. C.
AU - Chu, C. H.
PY - 2007
Y1 - 2007
N2 - A novel cell operation scheme featuring low voltage, high speed, and excellent data retention has been proposed for SONOS flash memory. First, in 1bit/cell operation, program is achieved by a back-bias assisted hot hole injection, while erase is achieved by forward-bias assisted electron injection. For a thick tunnel oxide (50A°), the ultra-low voltage (∼5V) and ultra-fast speed (<1μsec) operation has been the record reported to date. On the other hand, a 2 bit/cell operation is also demonstrated, in which very good retention can be achieved in comparison to conventional operation schemes, e.g., CUE (channel hot electron) or BTB(Band-to-band) tunneling etc.
AB - A novel cell operation scheme featuring low voltage, high speed, and excellent data retention has been proposed for SONOS flash memory. First, in 1bit/cell operation, program is achieved by a back-bias assisted hot hole injection, while erase is achieved by forward-bias assisted electron injection. For a thick tunnel oxide (50A°), the ultra-low voltage (∼5V) and ultra-fast speed (<1μsec) operation has been the record reported to date. On the other hand, a 2 bit/cell operation is also demonstrated, in which very good retention can be achieved in comparison to conventional operation schemes, e.g., CUE (channel hot electron) or BTB(Band-to-band) tunneling etc.
UR - http://www.scopus.com/inward/record.url?scp=50249132579&partnerID=8YFLogxK
U2 - 10.1109/IEDM.2007.4418972
DO - 10.1109/IEDM.2007.4418972
M3 - 会议文章
AN - SCOPUS:50249132579
SN - 0163-1918
SP - 457
EP - 460
JO - Technical Digest - International Electron Devices Meeting, IEDM
JF - Technical Digest - International Electron Devices Meeting, IEDM
M1 - 4418972
T2 - 2007 IEEE International Electron Devices Meeting, IEDM
Y2 - 10 December 2007 through 12 December 2007
ER -