On the surface sulfidation of AlGaN/GaN schottky contacts

L. B. Chang; N. C. Chen; C. H. Chang

doi:10.1109/iwjt.2006.220905

On the surface sulfidation of AlGaN/GaN schottky contacts

L. B. Chang^*
, N. C. Chen
, C. H. Chang

^*此作品的通信作者

光電工程研究所(碩士班)

Chang Gung University
National Defense University Taiwan

研究成果: 圖書/報告稿件的類型 › 會議稿件 › 同行評審

摘要

Non-sulfur-treated, (NH₄)₂S-treated, and P ₂S₅/(NH₄)₂S-treated AlGaN/GaN Schottky contacts are prepared and characterized. The variations in their Schottky barrier height and leakage current are studied. Then an ultra violet light (UV) exposition is also made during some of the sulfidation processes from which a speeding degradation phenomenon is found and reported.

原文	英語
主出版物標題	Extended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06
發行者	IEEE Computer Society
頁面	258-261
頁數	4
ISBN（列印）	1424400473, 9781424400478
DOIs	https://doi.org/10.1109/iwjt.2006.220905
出版狀態	已出版 - 2006
事件	Extended Abstracts of the 6th International Workshop on Junction Technology, IWJT '06 - Shanghai, 中國持續時間: 15 05 2006 → 16 05 2006

出版系列

名字	Extended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06

Conference

Conference	Extended Abstracts of the 6th International Workshop on Junction Technology, IWJT '06
國家/地區	中國
城市	Shanghai
期間	15/05/06 → 16/05/06

存取文件

10.1109/iwjt.2006.220905

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Link to publication in Scopus

引用此

Chang, L. B., Chen, N. C., & Chang, C. H. (2006). On the surface sulfidation of AlGaN/GaN schottky contacts. 於 Extended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06 (頁 258-261). 文章 1669492 (Extended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06). IEEE Computer Society. https://doi.org/10.1109/iwjt.2006.220905

@inproceedings{4290f5b20a5548bbbc988b9269942974,

title = "On the surface sulfidation of AlGaN/GaN schottky contacts",

abstract = "Non-sulfur-treated, (NH4)2S-treated, and P 2S5/(NH4)2S-treated AlGaN/GaN Schottky contacts are prepared and characterized. The variations in their Schottky barrier height and leakage current are studied. Then an ultra violet light (UV) exposition is also made during some of the sulfidation processes from which a speeding degradation phenomenon is found and reported.",

author = "Chang, \{L. B.\} and Chen, \{N. C.\} and Chang, \{C. H.\}",

year = "2006",

doi = "10.1109/iwjt.2006.220905",

language = "英语",

isbn = "1424400473",

series = "Extended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06",

publisher = "IEEE Computer Society",

pages = "258--261",

booktitle = "Extended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06",

address = "美国",

note = "Extended Abstracts of the 6th International Workshop on Junction Technology, IWJT '06 ; Conference date: 15-05-2006 Through 16-05-2006",

}

Chang, LB, Chen, NC & Chang, CH 2006, On the surface sulfidation of AlGaN/GaN schottky contacts. 於 Extended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06., 1669492, Extended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06, IEEE Computer Society, 頁 258-261, Extended Abstracts of the 6th International Workshop on Junction Technology, IWJT '06, Shanghai, 中國, 15/05/06. https://doi.org/10.1109/iwjt.2006.220905

On the surface sulfidation of AlGaN/GaN schottky contacts. / Chang, L. B.; Chen, N. C.; Chang, C. H.
Extended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06. IEEE Computer Society, 2006. p. 258-261 1669492 (Extended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06).

研究成果: 圖書/報告稿件的類型 › 會議稿件 › 同行評審

TY - GEN

T1 - On the surface sulfidation of AlGaN/GaN schottky contacts

AU - Chang, L. B.

AU - Chen, N. C.

AU - Chang, C. H.

PY - 2006

Y1 - 2006

N2 - Non-sulfur-treated, (NH4)2S-treated, and P 2S5/(NH4)2S-treated AlGaN/GaN Schottky contacts are prepared and characterized. The variations in their Schottky barrier height and leakage current are studied. Then an ultra violet light (UV) exposition is also made during some of the sulfidation processes from which a speeding degradation phenomenon is found and reported.

AB - Non-sulfur-treated, (NH4)2S-treated, and P 2S5/(NH4)2S-treated AlGaN/GaN Schottky contacts are prepared and characterized. The variations in their Schottky barrier height and leakage current are studied. Then an ultra violet light (UV) exposition is also made during some of the sulfidation processes from which a speeding degradation phenomenon is found and reported.

UR - https://www.scopus.com/pages/publications/34250159465

U2 - 10.1109/iwjt.2006.220905

DO - 10.1109/iwjt.2006.220905

M3 - 会议稿件

AN - SCOPUS:34250159465

SN - 1424400473

SN - 9781424400478

T3 - Extended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06

SP - 258

EP - 261

BT - Extended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06

PB - IEEE Computer Society

T2 - Extended Abstracts of the 6th International Workshop on Junction Technology, IWJT '06

Y2 - 15 May 2006 through 16 May 2006

ER -

On the surface sulfidation of AlGaN/GaN schottky contacts

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