Optimization of DC-sputtered molybdenum back contact layers

Jhong Hao Jiang; Shou Yi Kuo

doi:10.1109/ISNE.2014.6839351

Optimization of DC-sputtered molybdenum back contact layers

Jhong Hao Jiang
, Shou Yi Kuo^*

^*此作品的通信作者

電子工程學系(含學碩博士班)

Chang Gung University

研究成果: 圖書/報告稿件的類型 › 會議稿件 › 同行評審

1 引文斯高帕斯（Scopus）

摘要

The Mo back contact layers were deposited by DC sputtering to investigate into that optimization the properties for CIGS solar cells. The working pressure and thickness of Mo thin films were varied during deposited process. When the working pressure at 1.5 mtorr and thickness of Mo thin films at 1000 nm, the properties of Mo thin films were best. The FWHM about 0.5° and electrical resistivity can arrive about 2.5 × 10^-5 Ω-cm.

原文	英語
主出版物標題	2014 International Symposium on Next-Generation Electronics, ISNE 2014
發行者	IEEE Computer Society
ISBN（列印）	9781479947805
DOIs	https://doi.org/10.1109/ISNE.2014.6839351
出版狀態	已出版 - 2014
事件	3rd International Symposium on Next-Generation Electronics, ISNE 2014 - Taoyuan, 台灣持續時間: 07 05 2014 → 10 05 2014

出版系列

名字	2014 International Symposium on Next-Generation Electronics, ISNE 2014

Conference

Conference	3rd International Symposium on Next-Generation Electronics, ISNE 2014
國家/地區	台灣
城市	Taoyuan
期間	07/05/14 → 10/05/14

UN SDG

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10.1109/ISNE.2014.6839351

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引用此

@inproceedings{b91893ac1df6457d862b63000355ff0b,

title = "Optimization of DC-sputtered molybdenum back contact layers",

abstract = "The Mo back contact layers were deposited by DC sputtering to investigate into that optimization the properties for CIGS solar cells. The working pressure and thickness of Mo thin films were varied during deposited process. When the working pressure at 1.5 mtorr and thickness of Mo thin films at 1000 nm, the properties of Mo thin films were best. The FWHM about 0.5° and electrical resistivity can arrive about 2.5 {\texttimes} 10-5 Ω-cm.",

keywords = "CIGS solr cell, DC sputtering, Mo back contact layers",

author = "Jiang, \{Jhong Hao\} and Kuo, \{Shou Yi\}",

year = "2014",

doi = "10.1109/ISNE.2014.6839351",

language = "英语",

isbn = "9781479947805",

series = "2014 International Symposium on Next-Generation Electronics, ISNE 2014",

publisher = "IEEE Computer Society",

booktitle = "2014 International Symposium on Next-Generation Electronics, ISNE 2014",

address = "美国",

note = "3rd International Symposium on Next-Generation Electronics, ISNE 2014 ; Conference date: 07-05-2014 Through 10-05-2014",

}

Jiang, JH & Kuo, SY 2014, Optimization of DC-sputtered molybdenum back contact layers. 於 2014 International Symposium on Next-Generation Electronics, ISNE 2014., 6839351, 2014 International Symposium on Next-Generation Electronics, ISNE 2014, IEEE Computer Society, 3rd International Symposium on Next-Generation Electronics, ISNE 2014, Taoyuan, 台灣, 07/05/14. https://doi.org/10.1109/ISNE.2014.6839351

TY - GEN

T1 - Optimization of DC-sputtered molybdenum back contact layers

AU - Jiang, Jhong Hao

AU - Kuo, Shou Yi

PY - 2014

Y1 - 2014

N2 - The Mo back contact layers were deposited by DC sputtering to investigate into that optimization the properties for CIGS solar cells. The working pressure and thickness of Mo thin films were varied during deposited process. When the working pressure at 1.5 mtorr and thickness of Mo thin films at 1000 nm, the properties of Mo thin films were best. The FWHM about 0.5° and electrical resistivity can arrive about 2.5 × 10-5 Ω-cm.

AB - The Mo back contact layers were deposited by DC sputtering to investigate into that optimization the properties for CIGS solar cells. The working pressure and thickness of Mo thin films were varied during deposited process. When the working pressure at 1.5 mtorr and thickness of Mo thin films at 1000 nm, the properties of Mo thin films were best. The FWHM about 0.5° and electrical resistivity can arrive about 2.5 × 10-5 Ω-cm.

KW - CIGS solr cell

KW - DC sputtering

KW - Mo back contact layers

UR - https://www.scopus.com/pages/publications/84903851656

U2 - 10.1109/ISNE.2014.6839351

DO - 10.1109/ISNE.2014.6839351

M3 - 会议稿件

AN - SCOPUS:84903851656

SN - 9781479947805

T3 - 2014 International Symposium on Next-Generation Electronics, ISNE 2014

BT - 2014 International Symposium on Next-Generation Electronics, ISNE 2014

PB - IEEE Computer Society

T2 - 3rd International Symposium on Next-Generation Electronics, ISNE 2014

Y2 - 7 May 2014 through 10 May 2014

ER -

Optimization of DC-sputtered molybdenum back contact layers

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