TY - GEN
T1 - Optimization of growth parameters for improved adhesion and electricity of molybdenum films deposited by RF magnetron sputtering
AU - Kuo, Shou Yi
AU - Jeng, Ming Jer
AU - Chang, Liann Be
AU - Lin, Wei Ting
AU - Hu, Sung Cheng
AU - Lu, Yung Tien
AU - Wu, Ching Wen
PY - 2009
Y1 - 2009
N2 - In this article, we report the fabrication and characterization of molybdenum (Mo) thin films on soda-lime glass substrate grown by reactive RF magnetron sputtering for Cu(ln,Ga)Se 2 thin film solar cells. It was found that the growth parameters, such as argon flow rate, RF power, bi-Iayer of Mo thin films and substrate temperature, have significant influences on properties of Mo films. As the argon flow rate was increased, the sheet resistance of Mo films increase, and the strain were changed from tensile to compressive. Higher RF power leads to a decrease on sheet resistance, and the optimal thickness and sheet resistance are 1 μm and 0.2 Ωl□. In addition, our experimental results proved that the increase of substrate temperature will lead to better adhesion of Mo thin film with glass substrate, and lower sheet resistance (0.11-0.14 Ω/□).
AB - In this article, we report the fabrication and characterization of molybdenum (Mo) thin films on soda-lime glass substrate grown by reactive RF magnetron sputtering for Cu(ln,Ga)Se 2 thin film solar cells. It was found that the growth parameters, such as argon flow rate, RF power, bi-Iayer of Mo thin films and substrate temperature, have significant influences on properties of Mo films. As the argon flow rate was increased, the sheet resistance of Mo films increase, and the strain were changed from tensile to compressive. Higher RF power leads to a decrease on sheet resistance, and the optimal thickness and sheet resistance are 1 μm and 0.2 Ωl□. In addition, our experimental results proved that the increase of substrate temperature will lead to better adhesion of Mo thin film with glass substrate, and lower sheet resistance (0.11-0.14 Ω/□).
UR - http://www.scopus.com/inward/record.url?scp=77951574440&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2009.5411612
DO - 10.1109/PVSC.2009.5411612
M3 - 会议稿件
AN - SCOPUS:77951574440
SN - 9781424429509
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 594
EP - 596
BT - 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
T2 - 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Y2 - 7 June 2009 through 12 June 2009
ER -