P-I-N amorphous silicon light-addressable potentiometric sensors for high-photovoltage chemical image

Chia Ming Yang*, Yuan Hui Liao, Chun Hui Chen, Cong Cheng Chen, Chao Sung Lai

*此作品的通信作者

研究成果: 期刊稿件會議文章同行評審

3 引文 斯高帕斯(Scopus)

摘要

For higher photo signal of chemical image sensor, a new device structure of P-I-N amorphous silicon (a-Si) on ITO/glass is first applied in light-addressable potentiometric sensor (LAPS). Niobium oxide (NbOx) is used as pH sensing membrane. All processes of device are lower than 300oC, which are suitable for glass substrate. Based on photovoltage versus gate bias characteristics, calculated pH sensitivity and linearity between pH 2 to 10 is 40 mV/pH and 99.4%, respectively. Compare to conventional intrinsic amorphous silicon structure, improvement on photocurrent, and spatial resolution are 50% and 15%, respectively. In the meantime, higher frequency of ac signal of laser up to 20 kHz could be used for high speed scanning by means of red laser and analog micromirror scanning system.

原文英語
頁(從 - 到)1015-1018
頁數4
期刊Procedia Engineering
120
DOIs
出版狀態已出版 - 2015
事件29th European Conference on Solid-State Transducers, EUROSENSORS 2015; Freiburg; Germany; 6 September 2015 through 9 September 2015. - Freiburg, 德國
持續時間: 06 09 201509 09 2015

文獻附註

Publisher Copyright:
© 2015 The Authors. Published by Elsevier Ltd.

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