Performance enhancement for strained HfCO2 nMOSFET with Contact Etch Stop Layer (CESL) under pulsed-IV measurement

Woei Cherng Wu; Tien Sheng Chao; Te Hsin Chiu; Jer Chyi Wang; Chao Sung Lai; Ma Ming-Wen; Wen Cheng Lo; Yi Hsun Ho

doi:10.1109/EDSSC.2007.4450087

Performance enhancement for strained HfCO₂ nMOSFET with Contact Etch Stop Layer (CESL) under pulsed-IV measurement

Woei Cherng Wu^*, Tien Sheng Chao, Te Hsin Chiu, Jer Chyi Wang, Chao Sung Lai, Ma Ming-Wen, Wen Cheng Lo, Yi Hsun Ho

^*此作品的通信作者

電子工程學系(含學碩博士班)

研究成果: 圖書/報告稿件的類型 › 會議稿件 › 同行評審

摘要

High-performance CESL strained nMOSFET with HfO₂ gate dielectrics has been successfully demonstrated in this work. It is found that, the transconductance (gm) and driving current (I_on) of the nMOSFETs increase 70% and 90%, respectively, of the increase of devices with a 300 nm capping nitride layer. A superior HfO₂/Si interface for CESL-devices is observed, demonstrated by an obvious interface state density reduction (6.56×10¹¹ to 9.85×l0¹⁰ cm^-2). Further, a roughly 50% and 60% increase of g_m and I_on; respectively, can be achieved for the 300 nm SiN-capped HfO₂ nMOSFET without considering charge trapping under pulsed-IV measurement.

原文	英語
主出版物標題	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
頁面	161-164
頁數	4
DOIs	https://doi.org/10.1109/EDSSC.2007.4450087
出版狀態	已出版 - 2007
事件	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 - Tainan, 台灣持續時間: 20 12 2007 → 22 12 2007

出版系列

名字	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

Conference

Conference	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
國家/地區	台灣
城市	Tainan
期間	20/12/07 → 22/12/07

存取文件

10.1109/EDSSC.2007.4450087

其它文件與鏈接

Link to publication in Scopus

引用此

Wu, W. C., Chao, T. S., Chiu, T. H., Wang, J. C., Lai, C. S., Ming-Wen, M., Lo, W. C., & Ho, Y. H. (2007). Performance enhancement for strained HfCO₂ nMOSFET with Contact Etch Stop Layer (CESL) under pulsed-IV measurement. 於 IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 (頁 161-164). 文章 4450087 (IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007). https://doi.org/10.1109/EDSSC.2007.4450087

@inproceedings{042bbb9f202f4de89df9a14aec1188d2,

title = "Performance enhancement for strained HfCO2 nMOSFET with Contact Etch Stop Layer (CESL) under pulsed-IV measurement",

abstract = "High-performance CESL strained nMOSFET with HfO2 gate dielectrics has been successfully demonstrated in this work. It is found that, the transconductance (gm) and driving current (Ion) of the nMOSFETs increase 70% and 90%, respectively, of the increase of devices with a 300 nm capping nitride layer. A superior HfO2/Si interface for CESL-devices is observed, demonstrated by an obvious interface state density reduction (6.56×1011 to 9.85×l010 cm-2). Further, a roughly 50% and 60% increase of gm and Ion; respectively, can be achieved for the 300 nm SiN-capped HfO2 nMOSFET without considering charge trapping under pulsed-IV measurement.",

author = "Wu, {Woei Cherng} and Chao, {Tien Sheng} and Chiu, {Te Hsin} and Wang, {Jer Chyi} and Lai, {Chao Sung} and Ma Ming-Wen and Lo, {Wen Cheng} and Ho, {Yi Hsun}",

year = "2007",

doi = "10.1109/EDSSC.2007.4450087",

language = "英语",

isbn = "1424406374",

series = "IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007",

pages = "161--164",

booktitle = "IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007",

note = "IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 ; Conference date: 20-12-2007 Through 22-12-2007",

}

Wu, WC, Chao, TS, Chiu, TH, Wang, JC, Lai, CS, Ming-Wen, M, Lo, WC & Ho, YH 2007, Performance enhancement for strained HfCO₂ nMOSFET with Contact Etch Stop Layer (CESL) under pulsed-IV measurement. 於 IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007., 4450087, IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007, 頁 161-164, IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007, Tainan, 台灣, 20/12/07. https://doi.org/10.1109/EDSSC.2007.4450087

Performance enhancement for strained HfCO₂ nMOSFET with Contact Etch Stop Layer (CESL) under pulsed-IV measurement. / Wu, Woei Cherng; Chao, Tien Sheng; Chiu, Te Hsin 等.
IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007. 2007. p. 161-164 4450087 (IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007).

研究成果: 圖書/報告稿件的類型 › 會議稿件 › 同行評審

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T1 - Performance enhancement for strained HfCO2 nMOSFET with Contact Etch Stop Layer (CESL) under pulsed-IV measurement

AU - Wu, Woei Cherng

AU - Chao, Tien Sheng

AU - Chiu, Te Hsin

AU - Wang, Jer Chyi

AU - Lai, Chao Sung

AU - Ming-Wen, Ma

AU - Lo, Wen Cheng

AU - Ho, Yi Hsun

PY - 2007

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N2 - High-performance CESL strained nMOSFET with HfO2 gate dielectrics has been successfully demonstrated in this work. It is found that, the transconductance (gm) and driving current (Ion) of the nMOSFETs increase 70% and 90%, respectively, of the increase of devices with a 300 nm capping nitride layer. A superior HfO2/Si interface for CESL-devices is observed, demonstrated by an obvious interface state density reduction (6.56×1011 to 9.85×l010 cm-2). Further, a roughly 50% and 60% increase of gm and Ion; respectively, can be achieved for the 300 nm SiN-capped HfO2 nMOSFET without considering charge trapping under pulsed-IV measurement.

AB - High-performance CESL strained nMOSFET with HfO2 gate dielectrics has been successfully demonstrated in this work. It is found that, the transconductance (gm) and driving current (Ion) of the nMOSFETs increase 70% and 90%, respectively, of the increase of devices with a 300 nm capping nitride layer. A superior HfO2/Si interface for CESL-devices is observed, demonstrated by an obvious interface state density reduction (6.56×1011 to 9.85×l010 cm-2). Further, a roughly 50% and 60% increase of gm and Ion; respectively, can be achieved for the 300 nm SiN-capped HfO2 nMOSFET without considering charge trapping under pulsed-IV measurement.

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Wu WC, Chao TS, Chiu TH, Wang JC, Lai CS, Ming-Wen M 等. Performance enhancement for strained HfCO₂ nMOSFET with Contact Etch Stop Layer (CESL) under pulsed-IV measurement. 於 IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007. 2007. p. 161-164. 4450087. (IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007). doi: 10.1109/EDSSC.2007.4450087