PH sensing reliability of flexible ITO/PET electrodes on EGFETs prepared by a roll-to-roll process

Cheng En Lue, I. Shun Wang, Chi Hsien Huang, Yu Ting Shiao, Hau Cheng Wang, Chia Ming Yang, Shu Hao Hsu, Ching Yu Chang, William Wang, Chao Sung Lai*

*此作品的通信作者

研究成果: 期刊稿件文章同行評審

57 引文 斯高帕斯(Scopus)

摘要

In this work, indium tin oxide (ITO) layers were deposited by radio frequency sputtering using a roll-to-roll process on flexible polyethylene terephthalate substrates as pH-sensing electrodes of extended gate field effect transistors (EGFETs). When the pH sensitivity of EGFETs for ITO layers with different sheet resistances was compared, a higher sensitivity was found for samples with a lower sheet resistance (100 Ω/□), and a reliability evaluation was carried out for this condition. The average sensitivity was 50.1 mV/pH, as measured from pH 2 to pH 12. Over three additional runs, the standard variation of the average sensitivity was found to be ±1.7 mV/pH. The tolerance to light is high; the samples were measured in dark and light conditions, and a difference of only 0.6 mV was observed. The temperatures available for measurement are 25-40°C. Up to this point, the behavior of samples stored in dry conditions has been found to persist for more than 55 days.

原文英語
頁(從 - 到)1651-1654
頁數4
期刊Microelectronics Reliability
52
發行號8
DOIs
出版狀態已出版 - 08 2012

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