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PH sensor fabrication using CdSe/ZnS quantum dots

  • P. Kumar
  • , A. Prakash
  • , S. Maikap*
  • *此作品的通信作者
  • Chang Gung University

研究成果: 圖書/報告稿件的類型會議稿件同行評審

摘要

Fabrication and characterization of capacitive pH sensor based on Electrolyte/Insulator/Semiconductor (EIS) structure has been investigated. EIS structure has been fabricated by trapping CdSe/ZnS quantum dots in the chaperonin protein layer deposited on SiO2 surface. Random distribution of CdSe/ZnS quantum dots having very small diameter ~4nm characterized by atomic force microscope. Electrochemical characterization shows that improvement in pH response with sensitivity of 53.3mV/pH (~99% linearity) has been observed with CdSe/ZnS Quantum Dots modified EIS structure as compare to bare SiO2 EIS structure with pH response of 35mV/pH (~98% linearity). CdSe/ZnS modified pH sensor has good stability and repeatability concluded from the concap Vfb measurement. High surface area of the CdSe/ZnS quantum dots can be utilized for the immobilization of biomolecules and biosensor applications in future.

原文英語
主出版物標題Nano/Bio Sensors
發行者Electrochemical Society Inc.
頁面1-6
頁數6
版本15
ISBN(電子)9781623320218
ISBN(列印)9781623320218
DOIs
出版狀態已出版 - 2012
事件Symposium on Nano/Bio Sensors - 221st ECS Meeting - Seattle, WA, 美國
持續時間: 06 05 201210 05 2012

出版系列

名字ECS Transactions
號碼15
45
ISSN(列印)1938-5862
ISSN(電子)1938-6737

Conference

ConferenceSymposium on Nano/Bio Sensors - 221st ECS Meeting
國家/地區美國
城市Seattle, WA
期間06/05/1210/05/12

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