Photo-resist protected technology application on solution-based IZOTFT

Chao Nan Chen; Gwo Mei Wu; Kuo Hui Su; How Wen Chien; Jung Jie Huang

doi:10.4156/AISS.vol4.issue20.1

Photo-resist protected technology application on solution-based IZOTFT

Chao Nan Chen, Gwo Mei Wu, Kuo Hui Su, How Wen Chien, Jung Jie Huang^*

^*此作品的通信作者

光電工程研究所(碩士班)

研究成果: 期刊稿件 › 文章 › 同行評審

摘要

In this study, solution-based indium-znic-oxide (IZO) thin-film transistors (TFTs) with a photoresist protected structure using halftone technology are demonstrated. A halftone technology to produced two thickness photo-resist on IZO TFT device to protect channel region and improve the contact characteristics between IZO and S/D electrode simultaneously during plasma and etching process. The saturation field effect mobility of about 0.18 cm²/Vs, the current ON/OFF ratio is about 10⁶, and the threshold voltage is less than 3.0 V. The solution type IZO associated with photo-resist protected layer shows great potential in TFT LCD fabrication.

原文	英語
頁（從 - 到）	1-8
頁數	8
期刊	Advances in Information Sciences and Service Sciences
卷	4
發行號	20
DOIs	https://doi.org/10.4156/AISS.vol4.issue20.1
出版狀態	已出版 - 11 2012

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title = "Photo-resist protected technology application on solution-based IZOTFT",

abstract = "In this study, solution-based indium-znic-oxide (IZO) thin-film transistors (TFTs) with a photoresist protected structure using halftone technology are demonstrated. A halftone technology to produced two thickness photo-resist on IZO TFT device to protect channel region and improve the contact characteristics between IZO and S/D electrode simultaneously during plasma and etching process. The saturation field effect mobility of about 0.18 cm2/Vs, the current ON/OFF ratio is about 106, and the threshold voltage is less than 3.0 V. The solution type IZO associated with photo-resist protected layer shows great potential in TFT LCD fabrication.",

keywords = "IZO, Photo-resist protected, TFT",

author = "Chen, {Chao Nan} and Wu, {Gwo Mei} and Su, {Kuo Hui} and Chien, {How Wen} and Huang, {Jung Jie}",

year = "2012",

month = nov,

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AU - Chen, Chao Nan

AU - Wu, Gwo Mei

AU - Su, Kuo Hui

AU - Chien, How Wen

AU - Huang, Jung Jie

PY - 2012/11

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N2 - In this study, solution-based indium-znic-oxide (IZO) thin-film transistors (TFTs) with a photoresist protected structure using halftone technology are demonstrated. A halftone technology to produced two thickness photo-resist on IZO TFT device to protect channel region and improve the contact characteristics between IZO and S/D electrode simultaneously during plasma and etching process. The saturation field effect mobility of about 0.18 cm2/Vs, the current ON/OFF ratio is about 106, and the threshold voltage is less than 3.0 V. The solution type IZO associated with photo-resist protected layer shows great potential in TFT LCD fabrication.

AB - In this study, solution-based indium-znic-oxide (IZO) thin-film transistors (TFTs) with a photoresist protected structure using halftone technology are demonstrated. A halftone technology to produced two thickness photo-resist on IZO TFT device to protect channel region and improve the contact characteristics between IZO and S/D electrode simultaneously during plasma and etching process. The saturation field effect mobility of about 0.18 cm2/Vs, the current ON/OFF ratio is about 106, and the threshold voltage is less than 3.0 V. The solution type IZO associated with photo-resist protected layer shows great potential in TFT LCD fabrication.

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SN - 1976-3700

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JO - Advances in Information Sciences and Service Sciences

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Photo-resist protected technology application on solution-based IZOTFT

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