Physical and electrical characteristics of the high-k Ta₂ O ₅ (tantalum pentoxide) dielectric deposited on the polycrystalline silicon

The high-k Ta₂ O₅ films deposited on the polycrystalline silicon treated with different postrapid thermal annealing temperatures were formed as high-k interdielectrics. Physical and electrical characteristics of the Ta₂ O₅ dielectrics were investigated with x-ray diffraction, x-ray photoelectron spectroscopy, atomic force microscopy, and electrical analysis. The annealing at 800 °C was found to be the optimal condition to reduce the defects and interface traps existed in the interface between the Ta₂ O₅ dielectric and polysilicon to fabricate a well-crystallized film with higher breakdown field, lower leakage current and smaller charge trapping rate. This Ta₂ O₅ dielectric shows promise for future generation of nonvolatile memory.