Physical and electrical properties of Ti-doped Er2 O3 films for high-k gate dielectrics

Chuan Hsi Liu; Tung Ming Pan; Wei Hao Shu; Kuo Chan Huang

doi:10.1149/1.2742497

Physical and electrical properties of Ti-doped Er2 O3 films for high-k gate dielectrics

Chuan Hsi Liu^*
, Tung Ming Pan
, Wei Hao Shu
, Kuo Chan Huang

^*此作品的通信作者

電子工程學系(含學碩博士班)

Ming Chuan University
Chang Gung University

研究成果: 期刊稿件 › 文章 › 同行評審

10 引文斯高帕斯（Scopus）

摘要

Titanium-doped erbium oxide films on Si(100) have been investigated as an alternative gate dielectric. The dielectric films were characterized by X-ray photoelectron spectroscopy, atomic force microscopy, and electrical measurements. We found that the addition of Ti into Er2 O3 film after annealing at 700°C can reduce the SiOx formation at the interfacial layer and thus reduce the O diffusion during the film postthermal annealing process. Such suppression effect significantly improved the electrical properties of the dielectric films.

原文	英語
頁（從 - 到）	G54-G57
期刊	Electrochemical and Solid-State Letters
卷	10
發行號	8
DOIs	https://doi.org/10.1149/1.2742497
出版狀態	已出版 - 2007

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@article{3711da69349b41ad8753617f1369b8cb,

title = "Physical and electrical properties of Ti-doped Er2 O3 films for high-k gate dielectrics",

abstract = "Titanium-doped erbium oxide films on Si(100) have been investigated as an alternative gate dielectric. The dielectric films were characterized by X-ray photoelectron spectroscopy, atomic force microscopy, and electrical measurements. We found that the addition of Ti into Er2 O3 film after annealing at 700°C can reduce the SiOx formation at the interfacial layer and thus reduce the O diffusion during the film postthermal annealing process. Such suppression effect significantly improved the electrical properties of the dielectric films.",

author = "Liu, \{Chuan Hsi\} and Pan, \{Tung Ming\} and Shu, \{Wei Hao\} and Huang, \{Kuo Chan\}",

year = "2007",

doi = "10.1149/1.2742497",

language = "英语",

volume = "10",

pages = "G54--G57",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

publisher = "Electrochemical Society Inc.",

number = "8",

}

TY - JOUR

T1 - Physical and electrical properties of Ti-doped Er2 O3 films for high-k gate dielectrics

AU - Liu, Chuan Hsi

AU - Pan, Tung Ming

AU - Shu, Wei Hao

AU - Huang, Kuo Chan

PY - 2007

Y1 - 2007

N2 - Titanium-doped erbium oxide films on Si(100) have been investigated as an alternative gate dielectric. The dielectric films were characterized by X-ray photoelectron spectroscopy, atomic force microscopy, and electrical measurements. We found that the addition of Ti into Er2 O3 film after annealing at 700°C can reduce the SiOx formation at the interfacial layer and thus reduce the O diffusion during the film postthermal annealing process. Such suppression effect significantly improved the electrical properties of the dielectric films.

AB - Titanium-doped erbium oxide films on Si(100) have been investigated as an alternative gate dielectric. The dielectric films were characterized by X-ray photoelectron spectroscopy, atomic force microscopy, and electrical measurements. We found that the addition of Ti into Er2 O3 film after annealing at 700°C can reduce the SiOx formation at the interfacial layer and thus reduce the O diffusion during the film postthermal annealing process. Such suppression effect significantly improved the electrical properties of the dielectric films.

UR - https://www.scopus.com/pages/publications/34250377358

U2 - 10.1149/1.2742497

DO - 10.1149/1.2742497

M3 - 文章

AN - SCOPUS:34250377358

SN - 1099-0062

VL - 10

SP - G54-G57

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 8

ER -

Physical and electrical properties of Ti-doped Er2 O3 films for high-k gate dielectrics

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