Physical properties of amorphous InGaZnO4 films doped with Mn

Shiu Jen Liu; Hau Wei Fang; Shih Hao Su; Chia Hung Li; Jyh Shiarn Cherng; Jang Hsing Hsieh; Jenh Yih Juang

doi:10.1063/1.3095505

Physical properties of amorphous InGaZnO₄ films doped with Mn

Shiu Jen Liu^*, Hau Wei Fang, Shih Hao Su, Chia Hung Li, Jyh Shiarn Cherng, Jang Hsing Hsieh, Jenh Yih Juang

^*此作品的通信作者

研究成果: 期刊稿件 › 文章 › 同行評審

18 引文斯高帕斯（Scopus）

摘要

Amorphous InGaZnO₄ (a-IGZO) films doped with various concentrations of Mn have been fabricated by using pulsed-laser deposition technique. Optical, electrical, and magnetic properties of the prepared Mn-doped a-IGZO films were investigated. The resistivity, carrier concentration, and carrier mobility of the a-IGZO films were found to be, respectively, increased, decreased, and enhanced by Mn doping. Moreover, the optical transmission is slightly increased in the visible range and the optical band gaps are not affected in the Mn-doped films. Room-temperature ferromagnetism has been observed in the field-dependent magnetization measurements.

原文	英語
文章編號	092504
期刊	Applied Physics Letters
卷	94
發行號	9
DOIs	https://doi.org/10.1063/1.3095505
出版狀態	已出版 - 2009
對外發佈	是

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title = "Physical properties of amorphous InGaZnO4 films doped with Mn",

abstract = "Amorphous InGaZnO4 (a-IGZO) films doped with various concentrations of Mn have been fabricated by using pulsed-laser deposition technique. Optical, electrical, and magnetic properties of the prepared Mn-doped a-IGZO films were investigated. The resistivity, carrier concentration, and carrier mobility of the a-IGZO films were found to be, respectively, increased, decreased, and enhanced by Mn doping. Moreover, the optical transmission is slightly increased in the visible range and the optical band gaps are not affected in the Mn-doped films. Room-temperature ferromagnetism has been observed in the field-dependent magnetization measurements.",

author = "Liu, {Shiu Jen} and Fang, {Hau Wei} and Su, {Shih Hao} and Li, {Chia Hung} and Cherng, {Jyh Shiarn} and Hsieh, {Jang Hsing} and Juang, {Jenh Yih}",

year = "2009",

doi = "10.1063/1.3095505",

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volume = "94",

journal = "Applied Physics Letters",

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T1 - Physical properties of amorphous InGaZnO4 films doped with Mn

AU - Liu, Shiu Jen

AU - Fang, Hau Wei

AU - Su, Shih Hao

AU - Li, Chia Hung

AU - Cherng, Jyh Shiarn

AU - Hsieh, Jang Hsing

AU - Juang, Jenh Yih

PY - 2009

Y1 - 2009

N2 - Amorphous InGaZnO4 (a-IGZO) films doped with various concentrations of Mn have been fabricated by using pulsed-laser deposition technique. Optical, electrical, and magnetic properties of the prepared Mn-doped a-IGZO films were investigated. The resistivity, carrier concentration, and carrier mobility of the a-IGZO films were found to be, respectively, increased, decreased, and enhanced by Mn doping. Moreover, the optical transmission is slightly increased in the visible range and the optical band gaps are not affected in the Mn-doped films. Room-temperature ferromagnetism has been observed in the field-dependent magnetization measurements.

AB - Amorphous InGaZnO4 (a-IGZO) films doped with various concentrations of Mn have been fabricated by using pulsed-laser deposition technique. Optical, electrical, and magnetic properties of the prepared Mn-doped a-IGZO films were investigated. The resistivity, carrier concentration, and carrier mobility of the a-IGZO films were found to be, respectively, increased, decreased, and enhanced by Mn doping. Moreover, the optical transmission is slightly increased in the visible range and the optical band gaps are not affected in the Mn-doped films. Room-temperature ferromagnetism has been observed in the field-dependent magnetization measurements.

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DO - 10.1063/1.3095505

M3 - 文章

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SN - 0003-6951

VL - 94

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

M1 - 092504

ER -

Physical properties of amorphous InGaZnO4 films doped with Mn

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Physical properties of amorphous InGaZnO₄ films doped with Mn