Polysilicon-oxide-nitride-oxide-silicon-type flash memory using an Y 2O3 film as a charge trapping layer

Tung Ming Pan*, Wen Wei Yeh

*此作品的通信作者

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2 引文 斯高帕斯(Scopus)

摘要

A polysilicon-oxide-nitride-oxide-silicon-type flash memory using a high- k yttrium oxide (Y2 O3) film as the trapping storage layer is developed. This high- k Y2 O3 charge trapping layer memory exhibited large threshold voltage shifting (memory window of 3 V), excellent data retention (charge loss of 5 and 10% measured time up to 104 s and recorded at room temperature and 125°C, respectively), and superior endurance characteristics (program/erase cycles up to 105) because of the higher probability for trapping the charge carrier. This film appears to be a very promising charge trapping layer for high-density, two-bit nonvolatile flash memory application.

原文英語
頁(從 - 到)G37-G39
期刊Electrochemical and Solid-State Letters
11
發行號7
DOIs
出版狀態已出版 - 2008

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