Post deposition annealing effects on the reliability of ALD HfO2 films on strained-Si0.8Ge0.2 layers

P. J. Tzeng; S. Maikap; W. Z. Lai; C. S. Liang; P. S. Chen; L. S. Lee; C. W. Liu

Post deposition annealing effects on the reliability of ALD HfO₂ films on strained-Si_0.8Ge_0.2 layers

P. J. Tzeng^*
, S. Maikap
, W. Z. Lai
, C. S. Liang
, P. S. Chen
, L. S. Lee
, C. W. Liu

^*此作品的通信作者

Industrial Technology Research Institute of Taiwan
National Taiwan University

研究成果: 會議稿件的類型 › 論文 › 同行評審

1 引文斯高帕斯（Scopus）

摘要

The reliability of strained-Si_0.8Ge_0.2 and Si MOS devices with HfO₂ gate dielectrics prepared by atomic layer deposition (ALD) is investigated. The interfacial layer at HfO ₂/semiconductor observed is silicate-like at low annealing temperature (∼600°C) and SiO₂-like at high annealing temperature (900°C). The quality of HfO₂/SiGe interface is slightly inferior as compared to the HfO₂/Si interface, due to the elemental Ge at the interface. The reliability characteristics for both the HfO₂/Si and HfO₂/Si_0.8Ge_0.2 structures are improved with increasing the PDA temperature up to 800°C, due to the thicker interfacial oxide layer grown at the interface. However, with higher PDA temperature (∼800°C), serious crystallization of HfO ₂ film leads to more bulk traps induced electrical degradation.

原文	英語
頁面	29-32
頁數	4
出版狀態	已出版 - 2004
對外發佈	是
事件	Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004 - , 台灣持續時間: 05 07 2004 → 08 07 2004

Conference

Conference	Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004
國家/地區	台灣
期間	05/07/04 → 08/07/04

其它文件與鏈接

Link to publication in Scopus

引用此

@conference{416c2dcae6bb469ba0c154c8748a7271,

title = "Post deposition annealing effects on the reliability of ALD HfO2 films on strained-Si0.8Ge0.2 layers",

abstract = "The reliability of strained-Si0.8Ge0.2 and Si MOS devices with HfO2 gate dielectrics prepared by atomic layer deposition (ALD) is investigated. The interfacial layer at HfO 2/semiconductor observed is silicate-like at low annealing temperature (∼600°C) and SiO2-like at high annealing temperature (900°C). The quality of HfO2/SiGe interface is slightly inferior as compared to the HfO2/Si interface, due to the elemental Ge at the interface. The reliability characteristics for both the HfO2/Si and HfO2/Si0.8Ge0.2 structures are improved with increasing the PDA temperature up to 800°C, due to the thicker interfacial oxide layer grown at the interface. However, with higher PDA temperature (∼800°C), serious crystallization of HfO 2 film leads to more bulk traps induced electrical degradation.",

author = "Tzeng, \{P. J.\} and S. Maikap and Lai, \{W. Z.\} and Liang, \{C. S.\} and Chen, \{P. S.\} and Lee, \{L. S.\} and Liu, \{C. W.\}",

year = "2004",

language = "英语",

pages = "29--32",

note = "Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004 ; Conference date: 05-07-2004 Through 08-07-2004",

}

TY - CONF

T1 - Post deposition annealing effects on the reliability of ALD HfO2 films on strained-Si0.8Ge0.2 layers

AU - Tzeng, P. J.

AU - Maikap, S.

AU - Lai, W. Z.

AU - Liang, C. S.

AU - Chen, P. S.

AU - Lee, L. S.

AU - Liu, C. W.

PY - 2004

Y1 - 2004

N2 - The reliability of strained-Si0.8Ge0.2 and Si MOS devices with HfO2 gate dielectrics prepared by atomic layer deposition (ALD) is investigated. The interfacial layer at HfO 2/semiconductor observed is silicate-like at low annealing temperature (∼600°C) and SiO2-like at high annealing temperature (900°C). The quality of HfO2/SiGe interface is slightly inferior as compared to the HfO2/Si interface, due to the elemental Ge at the interface. The reliability characteristics for both the HfO2/Si and HfO2/Si0.8Ge0.2 structures are improved with increasing the PDA temperature up to 800°C, due to the thicker interfacial oxide layer grown at the interface. However, with higher PDA temperature (∼800°C), serious crystallization of HfO 2 film leads to more bulk traps induced electrical degradation.

AB - The reliability of strained-Si0.8Ge0.2 and Si MOS devices with HfO2 gate dielectrics prepared by atomic layer deposition (ALD) is investigated. The interfacial layer at HfO 2/semiconductor observed is silicate-like at low annealing temperature (∼600°C) and SiO2-like at high annealing temperature (900°C). The quality of HfO2/SiGe interface is slightly inferior as compared to the HfO2/Si interface, due to the elemental Ge at the interface. The reliability characteristics for both the HfO2/Si and HfO2/Si0.8Ge0.2 structures are improved with increasing the PDA temperature up to 800°C, due to the thicker interfacial oxide layer grown at the interface. However, with higher PDA temperature (∼800°C), serious crystallization of HfO 2 film leads to more bulk traps induced electrical degradation.

UR - https://www.scopus.com/pages/publications/14844320813

M3 - 论文

AN - SCOPUS:14844320813

SP - 29

EP - 32

T2 - Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004

Y2 - 5 July 2004 through 8 July 2004

ER -

Post deposition annealing effects on the reliability of ALD HfO2 films on strained-Si0.8Ge0.2 layers

摘要

Conference

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指紋

引用此

Post deposition annealing effects on the reliability of ALD HfO₂ films on strained-Si_0.8Ge_0.2 layers