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Preparation and characterization of pentacene-based organic thin-film transistors with PVA passivation layers

  • G. M. Wu*
  • , Y. H. Lu
  • , J. W. Teng
  • , J. C. Wang
  • , T. E. Nee
  • *此作品的通信作者
  • Chang Gung University

研究成果: 期刊稿件文章同行評審

9 引文 斯高帕斯(Scopus)

摘要

High-mobility organic thin-film transistors (OTFT) were fabricated with pentacene active layers and passivated by polyvinyl acetate (PVA) in this study. The organic pentacene film showed a single phase structure with the interplanar spacing of 1.54 nm corresponding to the (001) diffraction. The initial field effect mobility of OTFT was 4.4 × 10- 2 cm2/Vs without the passivation. After the PVA passivation, the device exhibited an improved field-effect mobility of 1.0 × 10- 1 cm2/Vs. It was decreased to 8.0 × 10- 2 cm2/Vs after 35 days. The on/off current ratio has been at the order of 106. The device durability was also examined by 80° bending cycle tests in tension. The transistors exhibited lower on/off ratio and higher turn-on voltage after 2500 bending cycles. The lifetime of the passivated OTFT was improved to more than 2 months in air. It has been suggested that the PVA passivation layer could effectively protect the pentacene-based OTFT from moisture and oxygen permeation.

原文英語
頁(從 - 到)5318-5321
頁數4
期刊Thin Solid Films
517
發行號17
DOIs
出版狀態已出版 - 01 07 2009

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