Preparation and photoelectrochemical applications of chemically synthesized Sb-doped p-AgIn5S8 film electrodes

Kong Wei Cheng; Chao Ming Huang; Guan Ting Pan; Wen Sheng Chang; Tai Chou Lee; Thomas C.K. Yang

doi:10.1016/j.physb.2008.12.011

Preparation and photoelectrochemical applications of chemically synthesized Sb-doped p-AgIn₅S₈ film electrodes

Kong Wei Cheng^*
, Chao Ming Huang
, Guan Ting Pan
, Wen Sheng Chang
, Tai Chou Lee
, Thomas C.K. Yang

^*此作品的通信作者

化工與材料工程學系(含學碩博士班及碩士在職專班)

Kun Shan University
National Taipei University of Technology
Industrial Technology Research Institute of Taiwan
National Chung Cheng University

研究成果: 期刊稿件 › 文章 › 同行評審

7 引文斯高帕斯（Scopus）

摘要

Chemically synthesized Sb-doped p-type AgIn₅S₈ films with several parameters, such as ratios of Sb/Ag in the reaction solution and multiple depositions of films, were grown on indium-tin-oxide coated glass substrates in this study. The X-ray diffraction patterns of samples show the cubic AgIn₅S₈ phase in these films. The thicknesses, energy band gaps, and carrier densities of these samples were in the ranges of 537-776 nm, 1.71-1.73 eV, and 6.57×10¹⁴-8.82×10¹⁴ cm^-3, respectively. The maximum photocurrent density of samples with an external potential of -3.5 V vs. a Pt electrode was found to be -5.02 mA/cm² under illumination using a 300 W Xe lamp system. Crown

原文	英語
頁（從 - 到）	1264-1270
頁數	7
期刊	Physica B: Condensed Matter
卷	404
發行號	8-11
DOIs	https://doi.org/10.1016/j.physb.2008.12.011
出版狀態	已出版 - 01 05 2009

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10.1016/j.physb.2008.12.011

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Link to publication in Scopus

引用此

@article{a38a28f7eba9430f9ae502a241762ad6,

title = "Preparation and photoelectrochemical applications of chemically synthesized Sb-doped p-AgIn5S8 film electrodes",

abstract = "Chemically synthesized Sb-doped p-type AgIn5S8 films with several parameters, such as ratios of Sb/Ag in the reaction solution and multiple depositions of films, were grown on indium-tin-oxide coated glass substrates in this study. The X-ray diffraction patterns of samples show the cubic AgIn5S8 phase in these films. The thicknesses, energy band gaps, and carrier densities of these samples were in the ranges of 537-776 nm, 1.71-1.73 eV, and 6.57{\texttimes}1014-8.82{\texttimes}1014 cm-3, respectively. The maximum photocurrent density of samples with an external potential of -3.5 V vs. a Pt electrode was found to be -5.02 mA/cm2 under illumination using a 300 W Xe lamp system. Crown",

keywords = "Chemical conversion, Compound, Crystalline, X-ray diffraction",

author = "Cheng, \{Kong Wei\} and Huang, \{Chao Ming\} and Pan, \{Guan Ting\} and Chang, \{Wen Sheng\} and Lee, \{Tai Chou\} and Yang, \{Thomas C.K.\}",

year = "2009",

month = may,

day = "1",

doi = "10.1016/j.physb.2008.12.011",

language = "英语",

volume = "404",

pages = "1264--1270",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier B.V.",

number = "8-11",

}

TY - JOUR

T1 - Preparation and photoelectrochemical applications of chemically synthesized Sb-doped p-AgIn5S8 film electrodes

AU - Cheng, Kong Wei

AU - Huang, Chao Ming

AU - Pan, Guan Ting

AU - Chang, Wen Sheng

AU - Lee, Tai Chou

AU - Yang, Thomas C.K.

PY - 2009/5/1

Y1 - 2009/5/1

N2 - Chemically synthesized Sb-doped p-type AgIn5S8 films with several parameters, such as ratios of Sb/Ag in the reaction solution and multiple depositions of films, were grown on indium-tin-oxide coated glass substrates in this study. The X-ray diffraction patterns of samples show the cubic AgIn5S8 phase in these films. The thicknesses, energy band gaps, and carrier densities of these samples were in the ranges of 537-776 nm, 1.71-1.73 eV, and 6.57×1014-8.82×1014 cm-3, respectively. The maximum photocurrent density of samples with an external potential of -3.5 V vs. a Pt electrode was found to be -5.02 mA/cm2 under illumination using a 300 W Xe lamp system. Crown

AB - Chemically synthesized Sb-doped p-type AgIn5S8 films with several parameters, such as ratios of Sb/Ag in the reaction solution and multiple depositions of films, were grown on indium-tin-oxide coated glass substrates in this study. The X-ray diffraction patterns of samples show the cubic AgIn5S8 phase in these films. The thicknesses, energy band gaps, and carrier densities of these samples were in the ranges of 537-776 nm, 1.71-1.73 eV, and 6.57×1014-8.82×1014 cm-3, respectively. The maximum photocurrent density of samples with an external potential of -3.5 V vs. a Pt electrode was found to be -5.02 mA/cm2 under illumination using a 300 W Xe lamp system. Crown

KW - Chemical conversion

KW - Compound

KW - Crystalline

KW - X-ray diffraction

UR - https://www.scopus.com/pages/publications/64149084538

U2 - 10.1016/j.physb.2008.12.011

DO - 10.1016/j.physb.2008.12.011

M3 - 文章

AN - SCOPUS:64149084538

SN - 0921-4526

VL - 404

SP - 1264

EP - 1270

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - 8-11

ER -

Preparation and photoelectrochemical applications of chemically synthesized Sb-doped p-AgIn5S8 film electrodes

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Preparation and photoelectrochemical applications of chemically synthesized Sb-doped p-AgIn₅S₈ film electrodes