Processing and device performance of GaN power rectifiers

A. P. Zhang; G. T. Dang; X. A. Cao; H. Cho; F. Ren; J. Han; J. I. Chyi; C. M. Lee; T. E. Nee; C. C. Chuo; G. C. Chi; S. N.G. Chu; R. G. Wilson; S. J. Pearton

doi:10.1557/s1092578300005159

Processing and device performance of GaN power rectifiers

A. P. Zhang^*, G. T. Dang, X. A. Cao, H. Cho, F. Ren, J. Han, J. I. Chyi, C. M. Lee, T. E. Nee, C. C. Chuo, G. C. Chi, S. N.G. Chu, R. G. Wilson, S. J. Pearton

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1 引文斯高帕斯（Scopus）

摘要

Mesa and planar geometry GaN Schottky rectifiers were fabricated on 3-12μm thick epitaxial layers. In planar diodes utilizing resistive GaN, a reverse breakdown voltage of 3.1 kV was achieved in structures containing p-guard rings and employing extension of the Schottky contact edge over an oxide layer. In devices without edge termination, the reverse breakdown voltage was 2.3 kV. Mesa diodes fabricated on conducting GaN had breakdown voltages in the range 200-400 V, with on-state resistances as low as 6m Ω-cm^-2.

原文	英語
期刊	MRS Internet Journal of Nitride Semiconductor Research
卷	5
發行號	SUPPL. 1
DOIs	https://doi.org/10.1557/s1092578300005159
出版狀態	已出版 - 2000
對外發佈	是

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title = "Processing and device performance of GaN power rectifiers",

abstract = "Mesa and planar geometry GaN Schottky rectifiers were fabricated on 3-12μm thick epitaxial layers. In planar diodes utilizing resistive GaN, a reverse breakdown voltage of 3.1 kV was achieved in structures containing p-guard rings and employing extension of the Schottky contact edge over an oxide layer. In devices without edge termination, the reverse breakdown voltage was 2.3 kV. Mesa diodes fabricated on conducting GaN had breakdown voltages in the range 200-400 V, with on-state resistances as low as 6m Ω-cm-2.",

author = "Zhang, {A. P.} and Dang, {G. T.} and Cao, {X. A.} and H. Cho and F. Ren and J. Han and Chyi, {J. I.} and Lee, {C. M.} and Nee, {T. E.} and Chuo, {C. C.} and Chi, {G. C.} and Chu, {S. N.G.} and Wilson, {R. G.} and Pearton, {S. J.}",

year = "2000",

doi = "10.1557/s1092578300005159",

language = "英语",

volume = "5",

journal = "MRS Internet Journal of Nitride Semiconductor Research",

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TY - JOUR

T1 - Processing and device performance of GaN power rectifiers

AU - Zhang, A. P.

AU - Dang, G. T.

AU - Cao, X. A.

AU - Cho, H.

AU - Ren, F.

AU - Han, J.

AU - Chyi, J. I.

AU - Lee, C. M.

AU - Nee, T. E.

AU - Chuo, C. C.

AU - Chi, G. C.

AU - Chu, S. N.G.

AU - Wilson, R. G.

AU - Pearton, S. J.

PY - 2000

Y1 - 2000

N2 - Mesa and planar geometry GaN Schottky rectifiers were fabricated on 3-12μm thick epitaxial layers. In planar diodes utilizing resistive GaN, a reverse breakdown voltage of 3.1 kV was achieved in structures containing p-guard rings and employing extension of the Schottky contact edge over an oxide layer. In devices without edge termination, the reverse breakdown voltage was 2.3 kV. Mesa diodes fabricated on conducting GaN had breakdown voltages in the range 200-400 V, with on-state resistances as low as 6m Ω-cm-2.

AB - Mesa and planar geometry GaN Schottky rectifiers were fabricated on 3-12μm thick epitaxial layers. In planar diodes utilizing resistive GaN, a reverse breakdown voltage of 3.1 kV was achieved in structures containing p-guard rings and employing extension of the Schottky contact edge over an oxide layer. In devices without edge termination, the reverse breakdown voltage was 2.3 kV. Mesa diodes fabricated on conducting GaN had breakdown voltages in the range 200-400 V, with on-state resistances as low as 6m Ω-cm-2.

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U2 - 10.1557/s1092578300005159

DO - 10.1557/s1092578300005159

M3 - 文章

AN - SCOPUS:3242783306

SN - 1092-5783

VL - 5

JO - MRS Internet Journal of Nitride Semiconductor Research

JF - MRS Internet Journal of Nitride Semiconductor Research

IS - SUPPL. 1

ER -

Processing and device performance of GaN power rectifiers

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