Raman and photoluminescence analyses of the crystalline InAlAs layer grown on InP substrate

G. C. Jiang; Y. D. Juang; J. J. Chyi; S. Lu; L. B. Chang

doi:10.1002/crat.2170300226

Raman and photoluminescence analyses of the crystalline InAlAs layer grown on InP substrate

G. C. Jiang^*
, Y. D. Juang
, J. J. Chyi
, S. Lu
, L. B. Chang

^*此作品的通信作者

National Defense University Taiwan
Tainan Normal College
National Central University

研究成果: 期刊稿件 › 文章 › 同行評審

5 引文斯高帕斯（Scopus）

摘要

Photoluminescence and Raman measurements are used to characterize the In_xAl_1‐xAs (0.48 < × <0.573)epilayers grown on InP substrate by molecular beam epitaxy. It is found that as In composition, x, deviates too much from 0.52, misfit dislocations may be introduced. These dislocations will dramatically reduce the radiative efficiency of the InAlAs epilayers. Raman spectra become broader and more asymmetry due to alloy potential fluctuations as the mismatch becomes large.

原文	英語
頁（從 - 到）	275-280
頁數	6
期刊	Crystal Research and Technology
卷	30
發行號	2
DOIs	https://doi.org/10.1002/crat.2170300226
出版狀態	已出版 - 1995
對外發佈	是

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abstract = "Photoluminescence and Raman measurements are used to characterize the InxAl1‐xAs (0.48 < {\texttimes} <0.573)epilayers grown on InP substrate by molecular beam epitaxy. It is found that as In composition, x, deviates too much from 0.52, misfit dislocations may be introduced. These dislocations will dramatically reduce the radiative efficiency of the InAlAs epilayers. Raman spectra become broader and more asymmetry due to alloy potential fluctuations as the mismatch becomes large.",

author = "Jiang, \{G. C.\} and Juang, \{Y. D.\} and Chyi, \{J. J.\} and S. Lu and Chang, \{L. B.\}",

year = "1995",

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T1 - Raman and photoluminescence analyses of the crystalline InAlAs layer grown on InP substrate

AU - Jiang, G. C.

AU - Juang, Y. D.

AU - Chyi, J. J.

AU - Lu, S.

AU - Chang, L. B.

PY - 1995

Y1 - 1995

N2 - Photoluminescence and Raman measurements are used to characterize the InxAl1‐xAs (0.48 < × <0.573)epilayers grown on InP substrate by molecular beam epitaxy. It is found that as In composition, x, deviates too much from 0.52, misfit dislocations may be introduced. These dislocations will dramatically reduce the radiative efficiency of the InAlAs epilayers. Raman spectra become broader and more asymmetry due to alloy potential fluctuations as the mismatch becomes large.

AB - Photoluminescence and Raman measurements are used to characterize the InxAl1‐xAs (0.48 < × <0.573)epilayers grown on InP substrate by molecular beam epitaxy. It is found that as In composition, x, deviates too much from 0.52, misfit dislocations may be introduced. These dislocations will dramatically reduce the radiative efficiency of the InAlAs epilayers. Raman spectra become broader and more asymmetry due to alloy potential fluctuations as the mismatch becomes large.

UR - https://www.scopus.com/pages/publications/0029220183

U2 - 10.1002/crat.2170300226

DO - 10.1002/crat.2170300226

M3 - 文章

AN - SCOPUS:0029220183

SN - 0232-1300

VL - 30

SP - 275

EP - 280

JO - Crystal Research and Technology

JF - Crystal Research and Technology

IS - 2

ER -

Raman and photoluminescence analyses of the crystalline InAlAs layer grown on InP substrate

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