Redshift of edge emission from AlGaInP light-emitting diodes and correlation with electronhole recombination lifetime

N. C. Chen, C. M. Lin, C. Shen, W. C. Lien, T. Y. Lin

研究成果: 期刊稿件文章同行評審

13 引文 斯高帕斯(Scopus)

摘要

The edge emission from AlGaInP light-emitting diodes showed a red-shifted peak in addition to the peak of surface emission. This shift resulted from the quantum-well absorption of the guided wave. Although the shift degrades the color quality and the extraction efficiency of the device, it helps elucidate many important optical properties of the material and the dynamics of carrier recombination, including the electron-hole recombination lifetime, the optical joint density of state, the spontaneous emission spectrum and the absorption spectrum. A simple concept of the bimolecular recombination is established. The corresponding coefficient can be expressed by a simple formula and was therefore determined.

原文英語
頁(從 - 到)20759-20773
頁數15
期刊Optics Express
16
發行號25
DOIs
出版狀態已出版 - 08 12 2008

指紋

深入研究「Redshift of edge emission from AlGaInP light-emitting diodes and correlation with electronhole recombination lifetime」主題。共同形成了獨特的指紋。

引用此