Reduced QCSE in InGaN-based LEDs by patterned sapphire substrates with enlarging the diameter of hexagonal hole

Yen Pu Chen; Vincent Su; Ming Lun Lee; Yao Hong You; Po Hsun Chen; Ray Ming Lin; Chieh Hsiung Kuan

doi:10.1117/12.2178768

Reduced QCSE in InGaN-based LEDs by patterned sapphire substrates with enlarging the diameter of hexagonal hole

Yen Pu Chen
, Vincent Su
, Ming Lun Lee
, Yao Hong You
, Po Hsun Chen
, Ray Ming Lin
, Chieh Hsiung Kuan^*

^*此作品的通信作者

電子工程學系(含學碩博士班)

National Taiwan University

研究成果: 圖書/報告稿件的類型 › 會議稿件 › 同行評審

1 引文斯高帕斯（Scopus）

摘要

This paper reports the growths of InGaN-based light-emitting diodes (LEDs) on the patterned sapphire substrates (PSSs) with enlarging the diameter of hexagonal hole can reduce the related quantum-confined Stark effect (QCSE) within multiple-quantum wells (MQWs), resulting in that the PL relative intensity is enhanced by up to 95% as compared to the conventional one.

原文	英語
主出版物標題	Nanotechnology VII
編輯	Ion M. Tiginyanu
發行者	SPIE
ISBN（電子）	9781628416428
DOIs	https://doi.org/10.1117/12.2178768
出版狀態	已出版 - 2015
事件	Nanotechnology VII - Barcelona, 西班牙持續時間: 04 05 2015 → 06 05 2015

出版系列

名字	Proceedings of SPIE - The International Society for Optical Engineering
卷	9519
ISSN（列印）	0277-786X
ISSN（電子）	1996-756X

Conference

Conference	Nanotechnology VII
國家/地區	西班牙
城市	Barcelona
期間	04/05/15 → 06/05/15

文獻附註

Publisher Copyright:
© 2015 SPIE.

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10.1117/12.2178768

其它文件與鏈接

Link to publication in Scopus

引用此

Chen, Y. P., Su, V., Lee, M. L., You, Y. H., Chen, P. H., Lin, R. M., & Kuan, C. H. (2015). Reduced QCSE in InGaN-based LEDs by patterned sapphire substrates with enlarging the diameter of hexagonal hole. 於 I. M. Tiginyanu (編輯), Nanotechnology VII 文章 95190X (Proceedings of SPIE - The International Society for Optical Engineering; 卷 9519). SPIE. https://doi.org/10.1117/12.2178768

@inproceedings{95dacb79a5064e658db43e7bf86e808b,

title = "Reduced QCSE in InGaN-based LEDs by patterned sapphire substrates with enlarging the diameter of hexagonal hole",

abstract = "This paper reports the growths of InGaN-based light-emitting diodes (LEDs) on the patterned sapphire substrates (PSSs) with enlarging the diameter of hexagonal hole can reduce the related quantum-confined Stark effect (QCSE) within multiple-quantum wells (MQWs), resulting in that the PL relative intensity is enhanced by up to 95\% as compared to the conventional one.",

keywords = "Optoelectronics, light-emitting diodes",

author = "Chen, \{Yen Pu\} and Vincent Su and Lee, \{Ming Lun\} and You, \{Yao Hong\} and Chen, \{Po Hsun\} and Lin, \{Ray Ming\} and Kuan, \{Chieh Hsiung\}",

note = "Publisher Copyright: {\textcopyright} 2015 SPIE.; Nanotechnology VII ; Conference date: 04-05-2015 Through 06-05-2015",

year = "2015",

doi = "10.1117/12.2178768",

language = "英语",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "SPIE",

editor = "Tiginyanu, \{Ion M.\}",

booktitle = "Nanotechnology VII",

address = "美国",

}

Chen, YP, Su, V, Lee, ML, You, YH, Chen, PH, Lin, RM & Kuan, CH 2015, Reduced QCSE in InGaN-based LEDs by patterned sapphire substrates with enlarging the diameter of hexagonal hole. 於 IM Tiginyanu (編輯), Nanotechnology VII., 95190X, Proceedings of SPIE - The International Society for Optical Engineering, 卷 9519, SPIE, Nanotechnology VII, Barcelona, 西班牙, 04/05/15. https://doi.org/10.1117/12.2178768

Reduced QCSE in InGaN-based LEDs by patterned sapphire substrates with enlarging the diameter of hexagonal hole. / Chen, Yen Pu; Su, Vincent; Lee, Ming Lun 等.
Nanotechnology VII. 編輯 / Ion M. Tiginyanu. SPIE, 2015. 95190X (Proceedings of SPIE - The International Society for Optical Engineering; 卷 9519).

研究成果: 圖書/報告稿件的類型 › 會議稿件 › 同行評審

TY - GEN

T1 - Reduced QCSE in InGaN-based LEDs by patterned sapphire substrates with enlarging the diameter of hexagonal hole

AU - Chen, Yen Pu

AU - Su, Vincent

AU - Lee, Ming Lun

AU - You, Yao Hong

AU - Chen, Po Hsun

AU - Lin, Ray Ming

AU - Kuan, Chieh Hsiung

PY - 2015

Y1 - 2015

N2 - This paper reports the growths of InGaN-based light-emitting diodes (LEDs) on the patterned sapphire substrates (PSSs) with enlarging the diameter of hexagonal hole can reduce the related quantum-confined Stark effect (QCSE) within multiple-quantum wells (MQWs), resulting in that the PL relative intensity is enhanced by up to 95% as compared to the conventional one.

AB - This paper reports the growths of InGaN-based light-emitting diodes (LEDs) on the patterned sapphire substrates (PSSs) with enlarging the diameter of hexagonal hole can reduce the related quantum-confined Stark effect (QCSE) within multiple-quantum wells (MQWs), resulting in that the PL relative intensity is enhanced by up to 95% as compared to the conventional one.

KW - Optoelectronics

KW - light-emitting diodes

UR - https://www.scopus.com/pages/publications/84938822704

U2 - 10.1117/12.2178768

DO - 10.1117/12.2178768

M3 - 会议稿件

AN - SCOPUS:84938822704

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Nanotechnology VII

A2 - Tiginyanu, Ion M.

PB - SPIE

T2 - Nanotechnology VII

Y2 - 4 May 2015 through 6 May 2015

ER -

Reduced QCSE in InGaN-based LEDs by patterned sapphire substrates with enlarging the diameter of hexagonal hole

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