Reliability evaluation and comparison of class-E and class-A power amplifiers with 0.18 μm CMOS technology

Wei Cheng Lin; Long Jei Du; Ya Chin King

Reliability evaluation and comparison of class-E and class-A power amplifiers with 0.18 μm CMOS technology

Wei Cheng Lin^*
, Long Jei Du
, Ya Chin King

^*此作品的通信作者

National Tsing Hua University

研究成果: 期刊稿件 › 會議文章 › 同行評審

2 引文斯高帕斯（Scopus）

摘要

Circuit Reliability of Class-E and Class-A power amplifiers are investigated based on a degradation sub-circuit model. In this study, we've found that Class-E amplifier degrades faster than Class-A amplifier, due to the relatively large switch stress voltage between gate to drain. The decrease of power added efficiency lead to the functional failure of a power amplifier.

原文	英語
頁（從 - 到）	415-416
頁數	2
期刊	Annual Proceedings - Reliability Physics (Symposium)
出版狀態	已出版 - 2004
對外發佈	是
事件	2004 IEEE International Reliability Physics Symposium Proceedings, 42nd Annual - Phoenix, AZ., 美國持續時間: 25 04 2004 → 29 04 2004

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引用此

@article{9d7180ca064f4b25b74c29e5393ad437,

title = "Reliability evaluation and comparison of class-E and class-A power amplifiers with 0.18 μm CMOS technology",

abstract = "Circuit Reliability of Class-E and Class-A power amplifiers are investigated based on a degradation sub-circuit model. In this study, we've found that Class-E amplifier degrades faster than Class-A amplifier, due to the relatively large switch stress voltage between gate to drain. The decrease of power added efficiency lead to the functional failure of a power amplifier.",

author = "Lin, \{Wei Cheng\} and Du, \{Long Jei\} and King, \{Ya Chin\}",

year = "2004",

language = "英语",

pages = "415--416",

journal = "Annual Proceedings - Reliability Physics (Symposium)",

issn = "0099-9512",

note = "2004 IEEE International Reliability Physics Symposium Proceedings, 42nd Annual ; Conference date: 25-04-2004 Through 29-04-2004",

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TY - JOUR

T1 - Reliability evaluation and comparison of class-E and class-A power amplifiers with 0.18 μm CMOS technology

AU - Lin, Wei Cheng

AU - Du, Long Jei

AU - King, Ya Chin

PY - 2004

Y1 - 2004

N2 - Circuit Reliability of Class-E and Class-A power amplifiers are investigated based on a degradation sub-circuit model. In this study, we've found that Class-E amplifier degrades faster than Class-A amplifier, due to the relatively large switch stress voltage between gate to drain. The decrease of power added efficiency lead to the functional failure of a power amplifier.

AB - Circuit Reliability of Class-E and Class-A power amplifiers are investigated based on a degradation sub-circuit model. In this study, we've found that Class-E amplifier degrades faster than Class-A amplifier, due to the relatively large switch stress voltage between gate to drain. The decrease of power added efficiency lead to the functional failure of a power amplifier.

UR - https://www.scopus.com/pages/publications/3042607837

M3 - 会议文章

AN - SCOPUS:3042607837

SN - 0099-9512

SP - 415

EP - 416

JO - Annual Proceedings - Reliability Physics (Symposium)

JF - Annual Proceedings - Reliability Physics (Symposium)

T2 - 2004 IEEE International Reliability Physics Symposium Proceedings, 42nd Annual

Y2 - 25 April 2004 through 29 April 2004

ER -

Reliability evaluation and comparison of class-E and class-A power amplifiers with 0.18 μm CMOS technology

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