Resistive switching memory and artificial synapse by using Ti/MoS₂ based conductive bridging cross-points

The Ti/MoS₂ based 9 × 9 conductive bridge cross-points in Al/Cu/Ti/MoS₂/Pt structure and its suitability in brain-inspired neuromorphic application have been investigated. Repeatable forming-free multilevel switching cycles with the low current compliances (CCs) of 10 μA–300 μA and long program/erase (P/E) endurance of >7 × 10⁸ with low P/E current of 10 μA/100 μA at a high-speed of 100 ns have been obtained than pure MoS₂ based devices. Copper reduction-oxidation (redox) reaction associated resistive switching mechanism through cyclic-voltammetry is also investigated. Conductivity modulated potentiation and depression results as well as LTP/LTD characteristics have been explored. Significantly low energy consumption in between 17 fJ to 398 fJ has been obtained.