@inproceedings{2480af3b87af4a828146a5248beecc2d,
title = "Retention behavior of graphene oxide resistive switching memory on flexible substrate",
abstract = "This work presents a flexible carbon based memory with the Al/graphene oxide (GO)/ITO structure fabricated at room temperature. The Al/GO/ITO devices show the unipolar resistive switching behavior with the resistance ratio to over 30, and sustain over 250 cycling without any resistance window closure. However, the retention fails due to the resistance increase of low resistance state (LRS). The mechanisms of switching and retention failure are studied.",
keywords = "RRAM, graphene oxide, resistive switching, retention, unipolar",
author = "Fang Yuan and Ye, {Yu Ren} and Wang, {Jer Chyi} and Zhigang Zhang and Liyang Pan and Jun Xu and Lai, {Chao Sung}",
year = "2013",
doi = "10.1109/INEC.2013.6466025",
language = "英语",
isbn = "9781467348416",
series = "Proceedings - Winter Simulation Conference",
pages = "288--290",
booktitle = "Proceedings of the 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013",
note = "2013 IEEE 5th International Nanoelectronics Conference, INEC 2013 ; Conference date: 02-01-2013 Through 04-01-2013",
}