RFIC TaN/SrTiO ₃/TaN MIM capacitors with 35 fF/μm ² capacitance density

A very high density of 35 fF/μm ² is measured in a radio frequency (RF) metal-insulator-metal (MIM) capacitor using high-K (κ = 169} SrTiO ₃ fabricated by very large scale integration (VLSI) back-end integration. A very small capacitance reduction of 4.1% from 100 kHz to 10 GHz, low leakage current of 1 × 70 ^-7 A/cm ² at 1 V are simultaneously measured. The small voltage dependence of a capacitance AC/C of 637 ppm is also obtained at 2 GHz, which ensures this MIM capacitor useful for high precision circuits operated at a RF regime.