RFIC TaN/SrTiO 3/TaN MIM capacitors with 35 fF/μm 2 capacitance density

C. C. Huang; K. C. Chiang; H. L. Kao; Albert Chin; W. J. Chen

doi:10.1109/LMWC.2006.880709

RFIC TaN/SrTiO ₃/TaN MIM capacitors with 35 fF/μm ² capacitance density

C. C. Huang^*
, K. C. Chiang
, H. L. Kao
, Albert Chin
, W. J. Chen

^*此作品的通信作者

電子工程學系(含學碩博士班)

研究成果: 期刊稿件 › 文章 › 同行評審

9 引文斯高帕斯（Scopus）

摘要

A very high density of 35 fF/μm ² is measured in a radio frequency (RF) metal-insulator-metal (MIM) capacitor using high-K (κ = 169} SrTiO ₃ fabricated by very large scale integration (VLSI) back-end integration. A very small capacitance reduction of 4.1% from 100 kHz to 10 GHz, low leakage current of 1 × 70 ^-7 A/cm ² at 1 V are simultaneously measured. The small voltage dependence of a capacitance AC/C of 637 ppm is also obtained at 2 GHz, which ensures this MIM capacitor useful for high precision circuits operated at a RF regime.

原文	英語
文章編號	1683803
頁（從 - 到）	493-495
頁數	3
期刊	IEEE Microwave and Wireless Components Letters
卷	16
發行號	9
DOIs	https://doi.org/10.1109/LMWC.2006.880709
出版狀態	已出版 - 09 2006

存取文件

10.1109/LMWC.2006.880709

其它文件與鏈接

Link to publication in Scopus

引用此

@article{cd1a6f7a69ef4bf2bd4941b736bbd4c1,

title = "RFIC TaN/SrTiO 3/TaN MIM capacitors with 35 fF/μm 2 capacitance density",

abstract = "A very high density of 35 fF/μm 2 is measured in a radio frequency (RF) metal-insulator-metal (MIM) capacitor using high-K (κ = 169\} SrTiO 3 fabricated by very large scale integration (VLSI) back-end integration. A very small capacitance reduction of 4.1\% from 100 kHz to 10 GHz, low leakage current of 1 × 70 -7 A/cm 2 at 1 V are simultaneously measured. The small voltage dependence of a capacitance AC/C of 637 ppm is also obtained at 2 GHz, which ensures this MIM capacitor useful for high precision circuits operated at a RF regime.",

keywords = "Capacitor, International Technology Roadmap for Semiconductors (ITRS), Metal-insulator-metal (MIM), Radio frequency integrated circuit (RF IC), SrTiO",

author = "Huang, \{C. C.\} and Chiang, \{K. C.\} and Kao, \{H. L.\} and Albert Chin and Chen, \{W. J.\}",

year = "2006",

month = sep,

doi = "10.1109/LMWC.2006.880709",

language = "英语",

volume = "16",

pages = "493--495",

journal = "IEEE Microwave and Wireless Components Letters",

issn = "1531-1309",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "9",

}

TY - JOUR

T1 - RFIC TaN/SrTiO 3/TaN MIM capacitors with 35 fF/μm 2 capacitance density

AU - Huang, C. C.

AU - Chiang, K. C.

AU - Kao, H. L.

AU - Chin, Albert

AU - Chen, W. J.

PY - 2006/9

Y1 - 2006/9

N2 - A very high density of 35 fF/μm 2 is measured in a radio frequency (RF) metal-insulator-metal (MIM) capacitor using high-K (κ = 169} SrTiO 3 fabricated by very large scale integration (VLSI) back-end integration. A very small capacitance reduction of 4.1% from 100 kHz to 10 GHz, low leakage current of 1 × 70 -7 A/cm 2 at 1 V are simultaneously measured. The small voltage dependence of a capacitance AC/C of 637 ppm is also obtained at 2 GHz, which ensures this MIM capacitor useful for high precision circuits operated at a RF regime.

AB - A very high density of 35 fF/μm 2 is measured in a radio frequency (RF) metal-insulator-metal (MIM) capacitor using high-K (κ = 169} SrTiO 3 fabricated by very large scale integration (VLSI) back-end integration. A very small capacitance reduction of 4.1% from 100 kHz to 10 GHz, low leakage current of 1 × 70 -7 A/cm 2 at 1 V are simultaneously measured. The small voltage dependence of a capacitance AC/C of 637 ppm is also obtained at 2 GHz, which ensures this MIM capacitor useful for high precision circuits operated at a RF regime.

KW - Capacitor

KW - International Technology Roadmap for Semiconductors (ITRS)

KW - Metal-insulator-metal (MIM)

KW - Radio frequency integrated circuit (RF IC)

KW - SrTiO

UR - https://www.scopus.com/pages/publications/33748356295

U2 - 10.1109/LMWC.2006.880709

DO - 10.1109/LMWC.2006.880709

M3 - 文章

AN - SCOPUS:33748356295

SN - 1531-1309

VL - 16

SP - 493

EP - 495

JO - IEEE Microwave and Wireless Components Letters

JF - IEEE Microwave and Wireless Components Letters

IS - 9

M1 - 1683803

ER -

RFIC TaN/SrTiO 3/TaN MIM capacitors with 35 fF/μm 2 capacitance density

摘要

存取文件

其它文件與鏈接

指紋

引用此

RFIC TaN/SrTiO ₃/TaN MIM capacitors with 35 fF/μm ² capacitance density